Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

In-plane Crystalline Anisotropy of Bulk Β-Ga2o3

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Microstructural analysis of heteroepitaxial -Ga<sub>2</sub>O<sub>3</sub> films grown on (0001) sapphire by halide vapor phase epitaxy

Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Ellipsometric Determination of Anisotropic Optical Constants of Single Phase Ga2O3 Thin Films in Its Orthorhombic and Monoclinic Phases

Structural and Optical In-Plane Anisotropy of M-Plane GaN

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)