Abstract:The deposition and crystallization of amorphous GaN buffer layers on Si(111) is firstly investigated by using an atomic force microscope (AFM), X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HRTEM). The amorphous GaN layers were deposited by MOCVD at 300°C. The islanding process by annealing at higher temperatures has been revealed by AFM. It is found that the amorphous layers begin to be crystallized by solid-phase epitaxy at 500°C in MOCVD, and the full-developed islands formed at about 600°C. XRD data show that the GaN peak appeared only after an annealing at higher temperatures. Cross-sectional HRTEM micrographs of the buffer region of the samples with amorphous GaN buffer layers reveal that many domains exist in the GaN buffer layers and these domains misorientate each other with a small angle. The boundaries between domains locate near the bunched steps, and, the films on a terrace between steps have the same crystal orientation. The amorphous buffer layer deposited at 300°C and the buffer layer directly deposited at 550°C are used in the growth of GaN epilayers, respectively. The XRD results and photoluminescence at room temperature of such GaN epilayers show that using the amorphous GaN buffer layer lead to monocrystalline and a narrower full-width at half-maximum (FWHM) of near band emission (16nm) than using the buffer layer directly deposited at 550°C (FWHM of 21nm). These results indicate that the quality of GaN epilayer on Si(111) can be improved by using the amorphous GaN buffer layer.

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Anisotropic Characteristics of A-Plane GaN Films Grown on Γ-Lialo2 (302) Substrates by MOCVD

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Influences Of Initial Buffer Layer Deposition On Electrical And Optical Properties In Cubic Gan Grown On Gaas(100) By Metalorganic Chemical Vapor Deposition

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Characteristics of the Crystalline and Luminescence Properties of A-Plane GaN Films Grown on \Gamma-Lialo2 (302) Substrates