Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Growth Mode and Surface Reconstruction of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

N-Plasma Assisted Molecular Beam Epitaxy of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

N-Plasma Assisted Molecular Beam Epitaxy of GaN(0001̄) Thin Films on 6H-Sic(0001̄)

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-Sic(0001)$(\sqrt{3}\times \sqrt{3})r30^\circ$ SUBSTRATE

Surface Morphology Of [11(2)Over-Bar0] A-Plane Gan Growth By Mocvd On [1(1)Over-Bar02] R-Plane Sapphire

Surface Superstructures and Optical Properties of Wurtzite GaN Grown on 6H-Sic

Surface and Interface Studies of Gan Epitaxy on Si(111) Via Zrb2 Buffer Layers

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Atomistic Study of GaN Surface Grown on Si(111)

Gan Homoepitaxy On Freestanding (1(1)Over-Bar00) Oriented Gan Substrates

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Influence of Lateral Growth on the Surface Pit Formation of GaN Heteroepitaxial Film Grown by MOCVD

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization