Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Surface Morphology Of [11(2)Over-Bar0] A-Plane Gan Growth By Mocvd On [1(1)Over-Bar02] R-Plane Sapphire

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Growth and Characterization of M Plane GaN Material by MOCVD

((3)over-bar10)-Oriented -Ga<sub>2</sub>O<sub>3</sub> grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Growth of N-Polar Gan on Vicinal Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer