Abstract:We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up to x = 0.04, it is possible to synthesize smooth and chemically homogeneous GaP1-xNx layers with a high-structural quality in a 2D fashion, namely, layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is favored by lowering the growth temperature while decreasing the N precursor flux. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to Si (x = 0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition.

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Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Gan heteroepitaxial growth techniques

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Synthesis And Properties Of Hvpe Nitride Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

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Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

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Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered $m$-plane sapphire substrates

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

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Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates