Abstract:A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy under the Ga-rich condition. While the as-grown GaN surface is revealed to be a featureless 1x1 structure, post-growth deposition of Ga at lower temperatures results in the formation of a series of ordered structures, such as 2X2, 4X4, 5X5, 5 root 3X2 root 13, root 7X root 7, and 10x10 in the order of the increasing Ga coverage. An 1x1-Ga-fluid structure is obtained with the highest Ga coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme. We further show that the 5x5 and 5 root 3X2 root 13 phases are two configurations that exhibit a unique one-dimensional characteristic in the adatom arrangement. Their structures can be understood by Peierls distortion against Fermi-surface instability under the Ga-adatom scheme. [S0163-1829(99)10719-7].

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Structures Of Gan(0001)-(2x2), -(4x4), And -(5x5) Surface Reconstructions

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy

Structures Of The Ga-Rich 4x2 And 4x6 Reconstructions Of The Gaas(001) Surface

Structures of the Ga-Rich4×2and4×6Reconstructions of the GaAs(001) Surface

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Surface geometry of MBE-grown GaAs(001) surface phases

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Surface Structure of GaAs(001)-(2Ã4) Î±, Î² and Î³ Phases

STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-Sic(0001)$(\sqrt{3}\times \sqrt{3})r30^\circ$ SUBSTRATE

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

N-Plasma Assisted Molecular Beam Epitaxy of GaN(0001̄) Thin Films on 6H-Sic(0001̄)

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

N-Plasma Assisted Molecular Beam Epitaxy of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

Atomistic Study of GaN Surface Grown on Si(111)

First-principle study on GaN(100) surface structure

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

First Principile Study on the Atomic and Electronic Structure of GaN(110)

Stm Study of the Ga Thin Films Grown on Si(111) Surface