Abstract:A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy under the Ga-rich condition. While the as-grown GaN surface is revealed to be a featureless 1x1 structure, post-growth deposition of Ga at lower temperatures results in the formation of a series of ordered structures, such as 2X2, 4X4, 5X5, 5 root 3X2 root 13, root 7X root 7, and 10x10 in the order of the increasing Ga coverage. An 1x1-Ga-fluid structure is obtained with the highest Ga coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme. We further show that the 5x5 and 5 root 3X2 root 13 phases are two configurations that exhibit a unique one-dimensional characteristic in the adatom arrangement. Their structures can be understood by Peierls distortion against Fermi-surface instability under the Ga-adatom scheme. [S0163-1829(99)10719-7].

Structures Of Gan(0001)-(2x2), -(4x4), And -(5x5) Surface Reconstructions

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Structures Of The Ga-Rich 4x2 And 4x6 Reconstructions Of The Gaas(001) Surface

Structures of the Ga-Rich4×2and4×6Reconstructions of the GaAs(001) Surface

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Morphology and reconstructed unit cell at GaAs(001)-(2×6)surface

The First Principle Study On The Atomic And Electronic Structure Of Gan(10(1)Over-Bar0) Surface

Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)

Scanning Probe Microscopy: Present Status and New Development. Scanning Tunneling Microscopy Study of GaAs(001) Surfaces (II).

MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

Surface Structure and Reconstructions of HgTe（111） Surfaces

Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface

Surface reconstructions and faceting of the GaGe(113) system

Spin Driving Reconstructions on the Gaas(001): Mn Surface

Surface Structure of GaAs(001)-(2Ã4) Î±, Î² and Î³ Phases

First-principle study on GaN(100) surface structure