First-principle study on GaN(100) surface structure

li yonghua,xu pengshou,pan haibin,xu faqiang,xie changkun
DOI: https://doi.org/10.7498/aps.54.317
IF: 0.906
2005-01-01
Acta Physica Sinica
Abstract:We have calculated the atomic and electronic structures of the non-polar surface of GaN(1010) by employing the full potential augmented plan wave and local orbital method (APW+ lo ). The calculated lattice constant and bulk modulus of zinc-blend GaN crystal are in excellent agreement with the experimental data. Using the slab and supercell model,we find that the surfae is characterized by a top-layer bond-lenth-contracting rotation relaxation. The surface Ga atom moves inward with 0.014nm and form a planar sp 2-like bonding with its three N neighbors. While the surface N atom moves outward with 0.013nm and tends to a taper p 3-like bonding with its three Ga neighbors. The surface layer rotation angle is 8.5°. From the calculated results of the desity of states of GaN (1010) surface we find that the surface relaxation induces the transformation from semi-metallic to semi- conducting characteristic. Furthermore,it is also shown that the surface charges have a large transfer,and the surface bonds have a rehybridization,which makes the ionicity reduce and the covalence increase,we believe that it causes the surface bond shortening and rotating.
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