Abstract:Oxygen adsorption and incorporation on the (1 0 0) surface of [0 0 1]-oriented GaN nanowires are investigated through first principle calculations. Results indicate that oxygen adsorption configurations are much more stable than oxygen incorporation. With increasing oxygen coverage, the surface of oxygen adsorption and incorporation become more stable and unstable, respectively. Besides, significant changes of surface structure occur after oxidization of the GaN nanowire surface, including changes in the thickness of the topmost bilayer and the distance between layers. Relaxation of the surface structure becomes more prominent with increasing oxygen coverage for adsorption cases. Compared with adsorption, the effects of incorporation on surface structures are more obvious. Furthermore, by comparison of band structures of clean surfaces and oxidized surfaces, both oxygen adsorption and incorporation will hinder the escape of photoelectrons due to the increase of the work function. Ultimately, calculations of Mulliken charge distribution and bond population suggest that oxygen impurities can obtain electrons from surface gallium and nitrogen atoms. The bond population of Ga-O for adsorption cases are larger than Ga-N, while that of incorporation cases is lower than Ga-N. All these calculations indicate that oxidization has significant impacts on the surface characteristics of GaN nanowires. Surface oxidization is harmful to the photoemission of optoelectronic devices fabricated by GaN nanowires. These results may contribute to the removal of surface oxides of GaN nanowires, but require further verification by experimental observation.

The first principle study on the atomic and electronic structure of GaN(101¯0) surface

The first principle study on the atomic and electronic structure of GaN() surface

The First Principle Study On The Atomic And Electronic Structure Of Gan(10(1)Over-Bar0) Surface

First-principle study on GaN(100) surface structure

First Principile Study on the Atomic and Electronic Structure of GaN(110)

First-principles study of the electronic structure and optical properties of GaN(0001) surface

Theoretic Calculation of Atom and Electronic Structure for Zinc-blende GaN (110) Surface

First-principle Study of GaN Polar and Nonpolar Surfaces

First-Principles Calculation of AlN(10-10)Surface Structure

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

First-principle Study on Adsorption of GaN on Surface of Si

Electronic Structure and the Optical Properties of GaN (0001) Surface from First-Principles Study

A First Principle Study on Systematic Stability and Electronic Properties of GaN Nanowire Surface with Cs/Li/NF3 Co-Adsorption

First Principle Studies of Oxygen Absorption on GaN(0001) Surface with Steps

A first principle study on oxygen adsorption and incorporation on the (100) surface of [001]-oriented GaN nanowires

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

Electronic Structure Of Gan And Aln Surfaces

Ab initio study on magnetism at GaN (100) and (101) surfaces

Study of GaN Adsorption on the Si Surface

Behavior of Aluminum Adsorption and Incorporation at Gan(0001) Surface: First-Principles Study

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy