Abstract:In this paper, we report a systematic study of the nitridation effects on GaN surface by first-principles calculations and X-ray/ultraviolet photoemission spectroscopy (XPS/UPS). According to the calculated electronic structures, two surface bands (i.e., the upper band and the lower band) can be seen within the bandgap for the typical surface configurations that may occur in the experimental condition as a result of surface reconstruction. By the deployment of sufficient nitridation, the energy positions of the lower band are modified toward the valence band by ~1 eV, resulting in the overlapping of the lower surface band with the valence band. Meanwhile, the upper surface band is also modified toward the valence band, but by a smaller amount. The modification to the positions of the surface bands is furthermore manifested by XPS/UPS spectra characterization performed on GaN sample that underwent surface treatment with low-energy remote N2 plasma. The theoretical and experimental results insightfully proclaim the nitridation effects on material properties at atomic level, and support a surface-state ionization model for the GaN band-edge (3.4 eV) emission in metal-AlGaN/GaN Schottky-on-heterojunction diode under forward bias.

First-principles study of the electronic structure and optical properties of GaN(0001) surface

Electronic Structure and the Optical Properties of GaN (0001) Surface from First-Principles Study

First-principle study on GaN(100) surface structure

The first principle study on the atomic and electronic structure of GaN(101¯0) surface

The first principle study on the atomic and electronic structure of GaN() surface

First-principle Study of GaN Polar and Nonpolar Surfaces

First Principile Study on the Atomic and Electronic Structure of GaN(110)

Theoretic Calculation of Atom and Electronic Structure for Zinc-blende GaN (110) Surface

The First Principle Study On The Atomic And Electronic Structure Of Gan(10(1)Over-Bar0) Surface

Electronic structure and optical properties of nonpolar Ga0.75Al0.25N surfaces

First Principles Calculations of the Electronic Structure and Optical Properties of (001), (011) and (111) Ga0.5Al0.5As Surfaces

Electronic Structure and Optical Properties of Cs/GaN(0001) Adsorption System

Theoretical study on electronic structure and optical properties of Ga 0.75Al0.25N(0 0 0 1) surface

First Principle Study of the Influence of Vacancy Defects on Optical Properties of GaN

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

First-principle Study on Adsorption of GaN on Surface of Si

Study of GaN Adsorption on the Si Surface

Theoretical Study on Electronic Structure and Optical Properties of Ga0.75al0.25n(0001) Surface

The Optical Properties of GaN (001)surface Modified by Intrinsic Defects from Density Functional Theory Calculation

First-principle Electronic, Elastic, and Optical Study of Cubic Gallium Nitride.

First-principles Study on the Properties of GPBII(Al2CuMg)(001)and S(Al2CuMg)(001) Surfaces