Abstract:In this paper, we report a systematic study of the nitridation effects on GaN surface by first-principles calculations and X-ray/ultraviolet photoemission spectroscopy (XPS/UPS). According to the calculated electronic structures, two surface bands (i.e., the upper band and the lower band) can be seen within the bandgap for the typical surface configurations that may occur in the experimental condition as a result of surface reconstruction. By the deployment of sufficient nitridation, the energy positions of the lower band are modified toward the valence band by ~1 eV, resulting in the overlapping of the lower surface band with the valence band. Meanwhile, the upper surface band is also modified toward the valence band, but by a smaller amount. The modification to the positions of the surface bands is furthermore manifested by XPS/UPS spectra characterization performed on GaN sample that underwent surface treatment with low-energy remote N2 plasma. The theoretical and experimental results insightfully proclaim the nitridation effects on material properties at atomic level, and support a surface-state ionization model for the GaN band-edge (3.4 eV) emission in metal-AlGaN/GaN Schottky-on-heterojunction diode under forward bias.

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

Structures Of Gan(0001)-(2x2), -(4x4), And -(5x5) Surface Reconstructions

First-principle study on GaN(100) surface structure

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

The first principle study on the atomic and electronic structure of GaN(101¯0) surface

The first principle study on the atomic and electronic structure of GaN() surface

First Principile Study on the Atomic and Electronic Structure of GaN(110)

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Atomistic Study of GaN Surface Grown on Si(111)

First-principles study of the electronic structure and optical properties of GaN(0001) surface

The First Principle Study On The Atomic And Electronic Structure Of Gan(10(1)Over-Bar0) Surface

Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior

Origins of GaN(0 0 0 1) surface reconstructions

Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy

Surface Superstructures and Optical Properties of Wurtzite GaN Grown on 6H-Sic

Electronic structure and optical properties of nonpolar Ga0.75Al0.25N surfaces