Abstract:GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory study of zinc blende (zb) GaN and diamond bulk and surface properties, and zb GaN on diamond interfaces using slab supercell models. Details are provided on the dependence of electronic properties with respect to supercell size, the use of pseudo-hydrogen to passivate the bottom GaN layer, and dipole corrections. The large bulk modulus of diamond provides a templating structure for GaN to grow upon, where a large lattice mismatch is accounted for through the inclusion of a cationic Ga adlayer. Looking at both type I and II surfaces and interfaces of GaN shows the instability of zb GaN without an adlayer (type II), where increased size, pseudo-hydrogen passivation and dipole corrections do not remove the spurious interaction between the top and bottom layers in type II GaN. Layer dependent density of states, local potential differences, and charge density differences show that the type I interface (with a Ga adlayer) is stable with an adhesion energy of 0.704 eV/Å2 (4.346 J/m2); interestingly, the diamond charge density intercalates into the first layer of GaN, which was seen experimentally for wurtzite GaN grown over diamond. The type II interface is shown to be unstable which implies that, to form a stable, thin-film zb interface between GaN and diamond, the partial pressure of trimethylgallium must be controlled to ensure a Ga layer exists both on the top and bottom layer of the GaN thin film atop the diamond. We believe our results can shed light towards a better understanding of the GaN/diamond multifaceted interface present in the GaN overgrowth on diamond samples.

Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior

Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation and dipole corrections

Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Vacuum Nanotechnology. Synthesis of New Materials and Characterization of Surfaces and Interfaces. Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN.

Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps

Zinc blende ZnS (001) surface structure investigated by XPS, LEED, and DFT

The Role of Zinc Pre-Exposure in Low-Defect Znse Growth on As-Stabilized Gaas (001)

Atomically Flat (0 0 1)gaas Surface Prepared by Two-Step Atomic-Hydrogen Treatment and Its Application to Heteroepitaxy of GaN

Relaxations of Nonpolar Zinc Blende (110) Surface of GaN, AlN, and BN

Atomic Structure of the Ge(15 3 23) Surface

Gallium adsorption on (0001) GaN surfaces

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: sp3–sp2 Transformation of Stoichiometric GaN(0001) Surface to (4 × 4) Pattern

Atomic Structure of the Ge(313) Surface

Stability of wurtzite semi-polar surfaces: algorithms and practices

Origins of GaN(0 0 0 1) surface reconstructions

A First-Principles Study Of Zno Polar Surface Growth: Adsorption Of Znxoy Clusters

Surface reconstructions and faceting of the GaGe(113) system

Reconfiguration of GaAs (110) surface with the adsorption of Xe atoms