Abstract:The processing of N-polar GaN (0001 ¯) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl2∕Ar or Cl2∕BCl3Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3nm. Maximum N-face etch rates of 370–390nm∕min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500nm∕h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2nm.

Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps

Gaas Surface Wet Cleaning by A Novel Treatment in Revolving Ultrasonic Atomization Solution

In-situ Investigation into the Atomic-Scale Removal Behavior of Gallium Nitride

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Surface chemistry and damage in the high density plasma etching of gallium arsenide

Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Electrochemical etching of highly conductive GaN single crystals

Planarization of GaN Using a FeIII-Ligand Based Catalyst in H2O2 Solution to Improve Its Removal Rate

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Effect of annealing on the surface characteristics of GaN-LED with AlGaN cladding after ICP dry etching

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

Atomically Smooth Gallium Nitride Surface Prepared by Chemical-Mechanical Polishing with Different Abrasives

Effects of Catalyst Concentration and Ultraviolet Intensity on Chemical Mechanical Polishing of GaN

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Vacuum Nanotechnology. Synthesis of New Materials and Characterization of Surfaces and Interfaces. Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN.

NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state