Abstract:Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trapping mechanism remains unclear. Here, we show that the GaN surface selectively adsorbs nitrogen dioxide (NO2) existing in the air in trace amounts. NO2 appears to charge the yellow-luminescence-related surface state. Mild heat treatment in vacuum removes this surface charge, only to be re-absorbed on re-exposure to air. Selective exposure of vacuum-annealed GaN to NO2 reproduces a similar surface charge distribution, as does the exposure to air. Residual gas analysis of the gases desorbed during heat treatment in vacuum shows a large concentration of nitric oxide (NO) released from the surface. These observations suggest that NO2 is selectively adsorbed from the air, deleteriously affecting the electrical properties of air-exposed GaN. The trapping of free electrons as part of the NO2chemisorption process changes the surface charge density, resulting in a change in the surface band bending. Uncontrollable by nature, NO2 adsorption may significantly affect any GaN-based electronic device. However, as shown here, a rather mild heat treatment in vacuum restores the surface state occupancy of GaN to its intrinsic state. If attempted before passivation, this heat treatment may provide a possible solution to longstanding stability problems associated with surface charge trapping in GaN-based devices.

What problem does this paper attempt to address?

The problem that this paper attempts to address is the issue of charge trapping by surface states on Gallium Nitride (GaN), which affects the potential applications of GaN in the microelectronics field. Specifically, the paper investigates the adsorption of nitrogen oxides (particularly nitrogen dioxide, NO2) on the GaN surface and its impact on surface charge distribution. The authors found through experiments that trace amounts of NO2 in the air selectively adsorb on the GaN surface, leading to surface state charging associated with yellow luminescence. This charging phenomenon can be removed by mild thermal treatment in a vacuum, but it reoccurs upon re-exposure to air. Therefore, the main aim of the paper is to reveal the adsorption mechanism of NO2 on the GaN surface and propose a method to restore the GaN surface charge state through thermal treatment, thereby improving the stability and performance of GaN-based devices. ### Summary of the main issues in the paper: 1. **GaN surface charge trapping issue**: The charge trapping by surface states on GaN is a long-standing problem that affects its application as a semiconductor material in the microelectronics field. 2. **NO2 adsorption effect**: The paper finds that trace amounts of NO2 in the air selectively adsorb on the GaN surface, leading to surface state charging associated with yellow luminescence. 3. **Thermal treatment to restore surface state**: Mild thermal treatment in a vacuum can remove this surface charge, but re-exposure to air will cause NO2 to re-adsorb and restore the charging state. 4. **NO2 adsorption mechanism**: The paper discusses in detail the adsorption mechanism of NO2 on the GaN surface, including charge trapping and changes in surface band bending. ### Solution: - **Thermal treatment method**: The paper proposes a method to restore the GaN surface charge state through mild thermal treatment in a vacuum, which may help address the stability issues of GaN-based devices.

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