Abstract:As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c04892.Experimental details; PL emissions and absolute PLQY of naturally oxidized, deoxidized, and nitrided GaAs samples; TRPL and TRTS kinetics of naturally oxidized and deoxidized GaAs under varied excitation fluence; photoconductivity of naturally oxidized, deoxidized, and nitrided GaAs samples at varied excitation fluence; fitting parameters in Figures 3c, 4b, and 6 (PDF).This article has not yet been cited by other publications.

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Photon-induced nitridation of GaAs surface at room temperature

Nitridation of GaAs(001) Using N2-RF Plasma

NITRIDATION OF K/GaAs(100) SURFACES

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Heteroepitaxy of GaN by using an ionized N source

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Passivation of Gaas Surface by Sulfur Glow Discharge

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate