Photon-induced nitridation of GaAs surface at room temperature

Qianjiang Xu,Xunmin Ding,Xiaoyuan Hou

1995-01-01

Abstract:Stimulated by the ultra-violet light produced during N2 glow discharging, the nitrogen molecules arriving at the GaAs surface will dissociated there and saturate the Ga and As dangling bonds. This has been verified by X-ray photoelectron spectroscopic measurement in this paper.

What problem does this paper attempt to address?

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

q j xu,x m ding,x y hou,xun wang

DOI: https://doi.org/10.1016/S0169-4332(96)00188-2

IF: 6.7

1996-01-01

Applied Surface Science

Abstract:Nitridation of a GaAs surface can be realized simply by exposing the substrate to a windowless-connected nitrogen glow discharge light source. The photoemission data measured in situ show that both GaN and AsN species have been formed during the exposure process. In addition, it is found that nitridation can result in a 0.3 eV reduction of surface band bending.
NITRIDATION OF K/GaAs(100) SURFACES

HU HAI-TIAN, LAI BING, YUAN ZE-LIANG, DING XUN-MIN, HOU XIAO-YUAN

DOI: https://doi.org/10.7498/aps.47.1041

1998-01-01

Abstract:Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.
Nitridation of GaAs(001) Using N2-RF Plasma

秦志新,陈志忠,周建辉,张国义

DOI: https://doi.org/10.3321/j.issn:1000-7032.2002.02.003

2002-01-01

Chinese Journal of Luminescence

Abstract:The nitridation process of GaAs(001) surface was performed by exposing the surface of GaAs(001) to the flux of plasma-excited N2 gas directly and indirectly in MBE system. Two processes show completely different effect on the GaAs surface. The nitridation performed by opening N2 cell shutter resulted in deterioration of the GaAs(001) surface and formation of polycrystalline structure. With increasing of the N2 pressure during the nitridation , the deterioration became serious. However, for the surface nitrided with the closed N2 cell shutter, after nitridation process at 500℃, the(3 × 3) RHEED pattern was observed and the surface still kept atomically flat. Our results indicate that the nitridation (without opening N2 shutter) of GaAs(001 ) surface at low temperature (500℃) is suitable for the formation of thin c-GaN layer with flat surface before normal GaN epilayer growth.
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

D. Tjeertes,T. J. F. Verstijnen,A. Gonzalo,J. M. Ulloa,M. S. Sharma,M. Felici,A. Polimeni,F. Biccari,M. Gurioli,G. Pettinari,C. Şahin,M. E. Flatté,P. M. Koenraad

DOI: https://doi.org/10.1103/PhysRevB.102.125304

2020-07-23

Abstract:Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.

Mesoscale and Nanoscale Physics
Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Xianshao Zou,Chuanshuai Li,Xiaojun Su,Yuchen Liu,Daniel Finkelstein-Shapiro,Wei Zhang,Arkady Yartsev

DOI: https://doi.org/10.1021/acsami.0c04892

2020-05-29

Abstract:As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c04892.Experimental details; PL emissions and absolute PLQY of naturally oxidized, deoxidized, and nitrided GaAs samples; TRPL and TRTS kinetics of naturally oxidized and deoxidized GaAs under varied excitation fluence; photoconductivity of naturally oxidized, deoxidized, and nitrided GaAs samples at varied excitation fluence; fitting parameters in Figures 3c, 4b, and 6 (PDF).This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

X. Z. Chen,D. H. Zhang,Y. J. Jin,J. H. Li,J. H. Teng,N. Yakovlev

DOI: https://doi.org/10.1016/j.jcrysgro.2012.03.059

IF: 1.8

2012-01-01

Journal of Crystal Growth

Abstract:We report the behavior of nitrogen implanted into GaAs wafer upon annealing in the range of 500°C to 1000°C. The SIMS results show out-diffusion of nitrogen and the peaks in the distribution profiles of implanted nitrogen broadening. XPS measurements indicate that the N bonding configuration before annealing is contributed by NAs, interstitial NN and the NAs complex. However, NAs complex disappears completely upon annealing at temperature higher than 700°C. The spectra and quantitative analysis reveal that a saturation of NAs happens as annealing temperature increases. Before the saturation, the substitional NAs keeps rising, which leads to the elevation of n-type doping level in host. Whereas beyond the saturation, the excess thermal energy beyond saturation triggers the kick-out mechanism and induces dramatic increase in the amount of NN split interstitials, resulting in suppression of the nitrogen out-diffusion during annealing and pining of the Fermi level.
Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

Dou Xiu-Ming,Sun Bao-Quan,Chang Xiu-Ying,Xiong Yong-Hua,Huang She-Song,Ni Hai-Qiao,Niu Zhi-Chuan

DOI: https://doi.org/10.1088/0256-307x/25/9/037

2008-01-01

Chinese Physics Letters

Abstract:We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g(2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.
A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

A.C. Ulibarri,R. Kothari,A. Garcia,J.C. Harmand,S. Park,F. Cadiz,J. Peretti,A.C.H. Rowe

DOI: https://doi.org/10.1002/pssb.202200361

2022-08-18

Abstract:A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $\mu$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.

Materials Science
Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

HL Zhu,DR Yang,L Wang,DL Due

DOI: https://doi.org/10.1016/j.tsf.2004.09.006

IF: 2.1

2004-01-01

Thin Solid Films

Abstract:Silicon wafers were annealed in pure and low-purity nitrogen gas at temperatures from 800 to 1200 °C. The surfaces of the annealed samples were investigated by means of X-ray photoelectron spectroscopy and optical microscopy. It was found that silicon wafers could react with nitrogen molecules to form silicon nitride films at temperatures higher than 1100 °C in pure nitrogen atmosphere. The thickness of the silicon nitride films thermally grown in pure nitrogen gas at 1100 and 1200 °C for up to 4 h was measured. The maximum thickness was about 50 nm, and the growth kinetics of direct thermal nitridation at 1100 and 1200 °C was obtained.
Room Temperature Photoluminescence at 4.5μm from InAsN

Q. Zhuang,A. M. R. Godenir,A. Krier,K. T. Lai,S. K. Haywood

DOI: https://doi.org/10.1063/1.2896638

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5μm is obtained.
Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

R.C.Plantenga,V.R.Kortan,T. Kaizu,Y.Harada,T.Kita,M.E.Flatté,P.M.Koenraad

DOI: https://doi.org/10.1103/PhysRevB.96.155210

2016-05-29

Abstract:Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration dependence, and impurity-associated spatially-localized resonant states within the conduction band. Cross-sectional scanning tunneling microscopy provides the local electronic structure of single nitrogen dopants at the (110) GaAs surface, yielding highly anisotropic spatial shapes when the empty states are imaged. Measurements of the resonant states relative to the GaAs surface states and their spatial extent allow an unambiguous assignment of specific features to nitrogen atoms at different depths below the cleaved (110) surface. Multiband tight binding calculations around the resonance energy of nitrogen in the conduction band match the imaged features. The spatial anisotropy is attributed to the tetrahedral symmetry of the bulk lattice. Additionally, the voltage dependence of the electronic contrast for two features in the filled state imaging suggest these features could be related to a locally modified surface state.

Mesoscale and Nanoscale Physics
Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

ZQ HE,XM DING,XY HOU,X WANG

DOI: https://doi.org/10.1063/1.111190

IF: 4

1994-01-01

Applied Physics Letters

Abstract:By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.
Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

D. M. Diatezua,zhugang wang,d park,z chen,a rockett,h morkoc

DOI: https://doi.org/10.1116/1.590300

1998-01-01

Abstract:Si3N4 has been produced on GaAs with low interface trap densities by electron cyclotron resonance N-2-He plasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400 degrees C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometric Si3N4 The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12-18 Angstrom to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of 3.0 x 10(11) eV(-1) cm(-2) when nitrided at 150 degrees C. At 400 degrees C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. (C) 1998 American Vacuum Society.[S0734-211X(98)00302-3].
Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

Ruiang Guo,Kaiyue Wang,Yufei Zhang,Zunpeng Xiao,Gangyuan Jia,Hongxing Wang,Yaqiao Wu,Yuming Tian

DOI: https://doi.org/10.1063/5.0023369

IF: 4

2020-10-26

Applied Physics Letters

Abstract:In this work, we investigate the photoluminescence spectra of nitrogen-vacancy (NV) centers in low-nitrogen diamond under 200 keV electron irradiation. We discuss the dependence of NV center charge states on annealing temperature, laser excitation power, and measurement temperature. The results show that the NV centers in low-nitrogen diamond are more likely to exist in the form of NV0 centers. Annealing breaks the charge balance between two charged NV centers, and, as the annealing temperature increases (300–800 °C), NV− centers are converted into NV0 centers. Meanwhile, the NV intensities significantly increase when the nitrogen atoms capture the vacancies after electron irradiation and subsequent annealing. With increases in laser power, the NV− centers are more prone to Auger recombination, and thus, the NV− centers are converted into NV0 centers. In addition, the NV centers are quenched by increases in measurement temperature, but the measurement temperature does not affect their intensity ratio. This result indicates that low-nitrogen diamond becomes more likely to form stable NV0 and NV− centers at different measurement temperatures.

physics, applied
Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

A. A. Lazarenko,K. Yu. Shubina,E. V. Nikitina,E. V. Pirogov,A. M. Mizerov,M. S. Sobolev

DOI: https://doi.org/10.1134/s1063782623090105

IF: 0.66

2024-03-16

Semiconductors

Abstract:The article investigates the effect of rapid thermal annealing of ternary GaAs 1– x N x /GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

physics, condensed matter
Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Q. He,X. M. Ding,X. Y. Hou

1999-01-01

Abstract:By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(lOO) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1Ol7 cmB3 . IS achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.
Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Eduardo Alejandro Valdez-Torija,Antonio Coyopol,Godofredo García-Salgado,Román Romano-Trujillo,Crisóforo Morales-Ruiz,Enrique Rosendo-Andrés,Marco Antonio Vásquez-Agustín,Justo Miguel Gracia-Jiménez,Reina Galeazzi-Isasmendi,Francisco Morales-Morales

DOI: https://doi.org/10.3390/cryst13040613

IF: 2.7

2023-04-04

Crystals

Abstract:In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900, and 1000 ∘C, and the nitridation process was carried out at 900 ∘C with an NH3:H2 gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in 2θ=52.18∘ corresponding to Ga2O3. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, GaxOy, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.

materials science, multidisciplinary,crystallography
Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

P. H. Tan,X. D. Luo,Z. Y. Xu,Y. Zhang,A. Mascarenhas,H. P. Xin,C. W. Tu,W. K. Ge

DOI: https://doi.org/10.1103/physrevb.73.205205

2006-01-01

Abstract:Using microphotoluminescence (mu-PL), in dilute N GaAs1-xNx alloys, we observe a PL band far above the bandgap E-0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (> 100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L-1c or N-x). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with mu-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.
Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

A. Bozanic,Z. Majlinger,M. Petravic,Q. Gao,D. Llewellyn,C. Crotti,Y. -W. Yang

DOI: https://doi.org/10.1116/1.2929851

2008-01-01

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Abstract:Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around NK edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.
Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Tan P H,Luo X D,Ge W K,Xu Z Y,Zhang Y,Mascarenhas A,Xin H P,Tu C W

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.03.003

2006-01-01

Chinese Journal of Semiconductors

Abstract:The transitions of E0, E0 +△0, and E+ in dilute GaAs1-x Nx alloys with x = 0.10% ,0.22% ,0.36% ,and0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E+ and E0 +△0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronicdoping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

Photon-induced nitridation of GaAs surface at room temperature

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

NITRIDATION OF K/GaAs(100) SURFACES

Nitridation of GaAs(001) Using N2-RF Plasma

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Room Temperature Photoluminescence at 4.5μm from InAsN

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys