Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Eduardo Alejandro Valdez-Torija,Antonio Coyopol,Godofredo García-Salgado,Román Romano-Trujillo,Crisóforo Morales-Ruiz,Enrique Rosendo-Andrés,Marco Antonio Vásquez-Agustín,Justo Miguel Gracia-Jiménez,Reina Galeazzi-Isasmendi,Francisco Morales-Morales

DOI: https://doi.org/10.3390/cryst13040613

IF: 2.7

2023-04-04

Crystals

Abstract:In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900, and 1000 ∘C, and the nitridation process was carried out at 900 ∘C with an NH3:H2 gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in 2θ=52.18∘ corresponding to Ga2O3. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, GaxOy, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.

materials science, multidisciplinary,crystallography

What problem does this paper attempt to address?

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Nitridation of GaAs(001) Using N2-RF Plasma

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Study on the Nitridation of Β-Ga2o3 Films*

Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Nitrogen Diffusion in the Si Growth on GaN by Low-Pressure Chemical Vapor Deposition

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering