Abstract:Uniform nitrogen doping in SiC crystals is crucial for high-yield production of SiC power devices. This paper tries to provide clues to implementing uniformly nitrogen-doped 4H–SiC crystals by considering the nitrogen doping kinetics during physical vapor transport (PVT) growth of 4H–SiC crystals. We measured the doping uniformity in PVT-grown 4H–SiC crystal using Raman scattering microscopy, finding that the doping uniformity improved as the nitrogen doping concentration increased. Using data from doping variations in PVT-grown SiC crystals, we deduced the step-flow velocity dependence of nitrogen incorporation at the growth front of three variable nitrogen-doped (mid-10 17 to more than 10 19 cm −3 ) PVT-grown 4H–SiC crystals, where the step-flow velocity was estimated from the local inclination angle of the growth front surface from the (000 1 ̄ ) plane. The results were analyzed using the two-site exchange model for surface segregation of impurity atoms on the growing crystal surface. The model reproduced the experimental results of nitrogen incorporation well. This analysis provides two critical physical parameters for the surface segregation of nitrogen on growing 4H–SiC crystal surfaces: the Gibbs energy and kinetic barrier height for surface segregation, which were extracted from the experimental data. The Gibbs energy and the kinetic barrier height for surface segregation of nitrogen atoms decreased for greater nitrogen doping concentrations. These results are discussed with the improved mechanism of nitrogen doping uniformity in 4H–SiC crystals at greater nitrogen doping concentrations.

Nitrogen Diffusion in the Si Growth on GaN by Low-Pressure Chemical Vapor Deposition

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

Structural Study Of Chemical Vapor Deposition Of Si On Gan

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer