Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Effect of nitrogen introduced at the SiC/SiO$_2$ interface and SiC side on the electronic states by first-principles calculation

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Nitrogen Diffusion in the Si Growth on GaN by Low-Pressure Chemical Vapor Deposition

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Investigation of Nitrogen Behaviors During Czochralski Silicon Crystal Growth

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient