Abstract:Unintentional dopants, such as hydrogen and oxygen, are unavoidable in the epitaxial growth of semiconductors, significantly impacting the device performances by acting as traps for interstitials and passivation. Herein, hybrid functional was adopted to systematically investigate the charge transfer of vacancies altered by hydrogen and oxygen passivation in 4H-SiC. Overall, both of them stabilize the formation of vacancies to prevent the diffusion and recombination effectively. Especially, the more the hydrogen passivated, the lower the formation energies. The number of passivated hydrogens shows huge impacts on the hole capturing of carbide vacancy (V-C), while the effect is small on carbon dangling bonds to capture electron both k and h site, of which the transition level epsilon (0/-1) always locates around E-C - 0.3-0.6 eV. Silicon vacancy (V-Si) primarily acts as an electron acceptor, with its transition level epsilon (0/-1) showing limited response to hydrogen passivation, while the effectiveness of electron capture is determined by the passivation process. Comparing divacancy (VCVSi) with single V-C and V-Si, there is an enhanced ability for hole capturing by silicon dangling orbitals. Once all dangling bonds are passivated, V-C, V-Si and VCVSi always keep neutral state. For oxygen passivation, V-C turns to a donor with one oxygen passivation and a neutral defect with fully passivated. V-Si is regulated from an acceptor to a bipolar dopant with one and two oxygen passivation. Our calculations unveil the underlying mechanism for hydrogen and oxygen passivation effects on the process of carrier captures of vacancies, which can further explain the relative defect signal in experimental characterizations.

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Compensation of p-type doping in Al-doped 4H-SiC

Nitrogen decoration of basal plane dislocations in 4H-SiC

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films

Passivation Effect of Hydrogen and Oxygen on the Carrier Capture of Vacancies in 4H-Sic

The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H

Physical Origin of Hydrogen-Adsorption-induced Metallization of the SiC Surface: N-Type Doping Via Formation of Hydrogen Bridge Bond.

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Deformation of 4H-SiC: The role of dopants