Abstract:High-purity semi-insulating (HPSI) 4H silicon carbide (4H-SiC) single crystals are critical semiconductor materials for fabricating GaN-based high-frequency devices. One of the major challenges for the growth of HPSI 4H-SiC single crystals is the unintentional doping of nitrogen (N) and boron (B). The addition of hydrogen has been supposed to mitigate unintentional doping. However, the underlying mechanism has not been well understood. In this work, the role of hydrogen in the growth of HPSI 4H-SiC single crystals is investigated by first-principles formation-energy calculations. We find that the addition of hydrogen significantly mitigates N doping while hardly affecting B doping. Once hydrogen is added, hydrogen may adsorb at the growing surface of 4H-SiC, leading to surface passivation. Since N can react with hydrogen to form stable NH 3 (g), the chemical potential of N is reduced, so that the formation energy of N in 4H-SiC increases. Hence, the critical partial pressure of nitrogen required for the growth of HPSI 4H-SiC single crystals increases by two orders of magnitude. Moreover, we reveal that the adjustment of relative B and N doping concentrations has a substantial impact on the Fermi energy of HPSI 4H-SiC. When the doping concentration of N is higher than that of B, N interacts with carbon vacancies (V C ) to pin the Fermi energy at Z 1/2 . When the doping concentration of B is higher than that of N, the Fermi energy is pinned at EH6/7. This explains that the resistivity of unintentionally doped HPSI 4H-SiC may vary.

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Control of Au/n-Si Schottky barrier containing hydrogen by means of zero bias annealing and reverse bias annealing

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING

Effect Of Bias Annealing On Au/N-Si Schottky-Barrier With Hydrogen Incorporation

Controlling the Schottky-Barrier Height of Ti/N-Gaas Schottky Diode Containing Hydrogen by Biased Annealing

Hydrogen interaction with Pd/SiO2/Si rectifying junction

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Effect of Reverse-Bias Annealing and Zero-Bias Annealing on a Hydrogen-Containing Au/(n-type GaAs) Schottky Barrier.

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Hydrogenation of Interface States at A Clean Grain Boundary in the Direct Silicon Bonded Wafer

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films