Hydrogen interaction with Pd/SiO2/Si rectifying junction

Ming Zhao,Shinji Nagata,Shunya Yamamoto,Masahito Yoshikawa,Tatsuo Shikama
DOI: https://doi.org/10.1016/j.mseb.2010.07.032
2010-01-01
Abstract:The interaction between hydrogen and Pd/SiO2/Si structures has been investigated in this research. Palladium (Pd) films <2nm thick which are consisted of Pd nanoparticles were deposited on n-type Si and sapphire substrates by magnetron sputtering. We have observed that the surface resistance of Pd/SiO2/Si structure increased more than 20 times within 1.4s at room temperature during the hydrogen exposure. Our comparison results between the surface I–V characteristic of Pd/SiO2/Si and Pd/Al2O3 indicate that the reduction in the carrier density of the interfacial layer is the major contribution to the surface resistance change in Pd/SiO2/Si. Further comparison results between the surface I–V characteristic of Pd/SiO2/Si and Pd/Si reveal that the interfacial layer is the inversion layer (p-type) of the rectifying junction.
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