Abstract:As a common impurity in 4H silicon carbide (4H-SiC), hydrogen (H) may play a role in tuning the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H on intrinsic defects such as carbon vacancies (V-C) and silicon vacancies (V-Si) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (H-i(bc)) and interstitial H at the tetrahedral center of Si (H-i(Si-te)) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. In n-type 4H-SiC, the compensation of H-i(Si-te) is found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4H-SiC. The compensation of H-i(bc) is negligible compared to that of V-C on the p-type doping of Al-doped 4H-SiC. We further examine whether H can passivate V-C and improve the carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of V-C by H is effective to eliminate the defect states of V-C, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate V-Si during the creation of V-Si centers. Thermal annealing is needed to decompose the resulting V-Si-nH (n = 1-4) complexes and promote the uniformity of the photoluminescence of V-Si arrays in 4H-SiC. The current work may inspire the impurity engineering of H in 4H-SiC.

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Hydrogen interaction with Pd/SiO2/Si rectifying junction

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Control of Au/n-Si Schottky barrier containing hydrogen by means of zero bias annealing and reverse bias annealing

Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Hydrogenation of Interface States at A Clean Grain Boundary in the Direct Silicon Bonded Wafer

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

Negative Charge State of Hydrogen Species in N-Type Gaas