Abstract:Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods of silicon nitride, were investigated. Such treatments provide control over the surface charge of the substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride substrates under CVD conditions produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.

Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter

Carbon - Silicon Heterojunction Diodes Formed by CH4/ Ar Rf Plasma Thin Film Deposition on Si Substrates

Defined Etching Of Carbon-Diamond Films On Silicon Using An Oxygen Plasma With Titanium Masking

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Amorphous Diamond-Si Semiconductor Heterojunctions

Pattern Transfer Onto Carbon-Films on Silicon Using Radio-Frequency Oxygen Plasma-Etching

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

On-State Behaviour Of Diamond M-I-P Structures

Galvanic Cell Formation in Silicon/Metal Contacts: The Effect on Silicon Surface Morphology

Schottky Barrier Height Modulation of Zr/p-Diamond Schottky Contact by Inserting Ultrathin Atomic Layer-Deposited Al2O3

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Effects of plasma etching treatment on the adhesion of diamond films

Effect of plasma pre-treatment on Au/p-InP schottky diodes

Superconducting Diamond on Silicon Nitride for Device Applications

Ultradeep, low-damage dry etching of SiC

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction