Pattern Transfer Onto Carbon-Films on Silicon Using Radio-Frequency Oxygen Plasma-Etching

KK CHAN,GAJ AMARATUNGA,TKS WONG
DOI: https://doi.org/10.1116/1.578140
1992-01-01
Abstract:Pattern transfer onto semiconducting carbon films with diamondlike properties using optical lithography and radio frequency oxygen plasma etching is reported. Titanium, aluminium, and gold were used as masking materials during oxygen etching. It was found that the titanium mask was most suitable for this process because of better resistance to the oxygen plasma. The microstructures observed were very uniform and well defined.
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