Abstract:Well-shaped micro/nano-structured suspended graphene is a versatile building block for micro/nano-electromechanical (MEMS/NEMS) devices. Directly 'sculpting' the suspended graphene membrane using an accelerated energetic electron/ion beam to form micro/nano-structured graphene possesses the merits of high resolution and well-processed flexibility. However, both the residual and process-induced stress in the membrane still challenge the obtaining of non-distorted freestanding graphene patterns. We report a featured double-sided masking and stress-release etching method to fabricate well-defined suspended graphene micro-ribbon. We demonstrated that the one-step low-energy (10 keV) electron beam induced the deposition of amorphous carbon (a-C) on both sides of the suspended graphene. The a-C layers were precisely self-aligned, not only allowing its use as reliable masks for the following plasma etch of suspended graphene, but showing potential for future applications of effectively 'writing' circuits/devices directly on both sides of a suspended 2D atomic-layered platform. A stress-release plasma etching process and its 'self-crumpling' mechanism were demonstrated. High-aspect-ratio micro-structured graphene (bridge and cantilever) with a good shape was obtained. This provides a promising and universal processing method for making suspended structures of 2D materials with in-plane flatness for potential MEMS/NEMS applications.

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

In Situ Etching of Graphene by Nonmetallic SiOx Nanoparticles

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Double-sided Masking and Stress-Release Etching for the Fabrication of High-Aspect-ratio Graphene Micro-Cantilever

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO 2 substrates

Rapid graphene oxide assisted chemical etching of silicon in HF/H2O2 solution

Large-Scale Preparation of Uniform Nanopatterned Silicon Substrates by Inductively Coupled Plasma Etching Using Self-Assembled Anodic Alumina Masks

Self-Assembled Monolayer Islands Masked Chemical Etching for Broad-Band Antireflective Silicon Surfaces

Selectively formation of porous silicon array using highly resistive silicon layer as masking materials

Effects of mask material conductivity on lateral undercut etching in silicon nano-pillar fabrication

Patterning of graphene using wet etching with hypochlorite and UV light

Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

Block copolymer templated etching on silicon.

Metal-assisted Electrochemical Etching of Silicon

Direct synthesis of nanopatterned epitaxial graphene on silicon carbide

A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

Electrohydrodynamic Direct-Writing Lithography: an Alternative Maskless Technique for Microstructure Fabrication

Multilayer Mask Technique in Deep Isotropic Etching of Silicon

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

Wet Scandium Etching for hard mask formation on a silicon substrate

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching