Abstract:Graphene(G),a single atomiclayer ofaromatic carbon atoms,has attracted much attention recently owing to its fascinating properties such as massless fermions, ballistic electronic transport, and ultrahigh electron mobility. [1] Currently, there are many approaches to the synthesis of graphene ranging from chemical vapor deposition from hydrocarbon to solution phase methods involving the chemical exfoliation of graphite. [2] One commonly used solution-processing route to graphene involved the chemical reduction of graphene oxide (GO). GO is produced by the oxidative treatment of graphite. [2] The basal planes of GO are decorated with epoxide and hydroxyl groups, while carboxylic and carbonyl groups are located at the edges. These oxygen functionalities render GO hydrophilic and improve its solubility, however they destroy the aromaticity of the graphene framework. As a result, GO is insulating, and a chemical reduction and thermal annealing treatment is needed before electronic conductivity could be recovered. The presence of oxygen functional groups also reduces the thermal stability of GO relative to that of G, since GO can be thermally pyrolized at high temperatures and transformed into volatile carbonaceous oxides. The thermal instability of GO motivates us to consider a strategy for the microstructuing of GO nanosheets using laser-assisted etching. The microstructuring of GO is relevant to the challenges of lithographically patterning G, since GO and G are interconvertible to some extent. Recently, promising approaches for the patterned assemblies of G on substrates have been developed. [3–8] Micro-contact printing using molecular templates was used to transfer GO sheets onto the pre-defined areas of the substrate surfaces via electrostatic attachment. [3] Large-scale G films were recently synthesized on patterned nickel layers using chemical vapor deposition. [7] All the patterning methods reported so far involved conventional lithographic techniques or employment of masks for the definition of patterns on substrates. To date, there are few demonstrations of a maskless, direct ‘‘writing’’ pattern on G-related materials using electron beam or optical methods.

Chemical etching of silicon assisted by graphene oxide under negative electric bias

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

In Situ Etching of Graphene by Nonmetallic SiOx Nanoparticles

Rapid graphene oxide assisted chemical etching of silicon in HF/H2O2 solution

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

MoS2-assisted chemical etching of silicon in an HF/H2O vapor

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Formation of Graphene–Silicon Junction by Room Temperature Reduction With Simultaneous Defects Removal

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

Microstructuring of Graphene Oxide Nanosheets Using Direct Laser Writing.

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

A Two-Step Etching Method to Fabricate Nanopores in Silicon

Surface And Interface Engineering Of Graphene Oxide Films By Controllable Photoreduction

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Voltage‐ and Metal‐assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Realizing Ultralow Concentration Gelation of Graphene Oxide with Artificial Interfaces