Abstract:A proposed mechanism called "pseudo‐wet plasma etching" explains cryogenic etching process with hydrogen‐containing fluorocarbon plasmas. At cryogenic temperatures, the synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed HF/H2O, and the material being etched, unlike conventional reactive ion etching conducted at high temperatures. Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO2 using CF4/H2 plasmas. The ER increases twofold when plasma with H2/(CF4 + H2) = 33% is used and the substrate temperature is lowered from 20 to −60 °C. The adsorption of HF and H2O on the SiO2 surface at cryogenic temperatures is confirmed using in situ Fourier transform infrared spectroscopy. The synergistic interactions of the surface‐adsorbed HF/H2O as etching catalysts and plasma species result in the ER enhancement. Therefore, a mechanism called "pseudo‐wet plasma etching" is proposed to explain the cryogenic etching process. This synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed chemistry, and the material being etched, rather than interactions between ion and gas phase, as observed in the conventional RIE.

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Rapid graphene oxide assisted chemical etching of silicon in HF/H2O2 solution

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Lift-off free catalyst for metal assisted chemical etching of silicon in vapour phase

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Synthesis And Fast Transfer Of Monolayer Mos2 On Reusable Fused Silica

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Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

Atmospheric Gas-Phase Catalyst Etching of SiO 2 for Deep Microfabrication Using HF Gas and Patterned Photoresist

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Etching selectivity of SiO 2 to SiN using HF and methanol at higher pressure up to 900 Pa

Modified Si Oxidation Behavior by Ultrathin Ni Catalyst Enabling Oxidant‐Less Metal‐Assisted Chemical Etching

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Etching-free transfer of wafer-scale MoS2 films

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.