Abstract:Continued downscaling of semiconductor devices has placed stringent constraints on all aspects of the fabrication process including plasma-assisted anisotropic etching. To address manufacturing challenges associated with atomic-scale control, material selectivity, etch fidelity, and increasingly complex device architectures, reactive ion etching (RIE) is transitioning to plasma-assisted atomic layer etching (ALE). Even though the number of elements used in the semiconductor devices has increased several-fold over the last four decades, SiO2 and SiNx remain the most commonly used dielectric materials. In fact, fluorocarbon based, plasma-assisted ALE processes for SiO2 and SiNx have already been integrated into semiconductor manufacturing, including etching of self-aligned contacts for advanced transistors. However, several challenges remain in achieving ultrahigh etch selectivity of SiO2 over SiNx and vice versa. In this article, first, the authors provide a focused review on selective RIE of SiO2 over SiNx and contrast this with ALE. A particular focus is given to the etching mechanism, including the role of the mixing layer composition and thickness at the fluorocarbon-SiO2 interface, the F-to-C ratio in the fluorocarbon parent gas, H2 dilution, surface composition on the nonetched SiNx, ion flux and energy, Ar plasma activation duration in ALE, and chamber memory effects. Second, we discuss the reverse case of selectively etching SiNx over SiO2 with careful attention given to the role of novel hydrofluorocarbon gases and dilution of the primary feed gas with other gases such as CH4 and NO. In the second part of this review, we also discuss how novel surface chemistries are enabled by the introduction of ALE, which include selective (NH4)2SiF6 formation on the SiNx surface and selective surface prefunctionalization of SiO2 to enable ultrahigh selectivity. Through this review, the authors hope to provide the readers with an exhaustive knowledge of the selectivity mechanisms for RIE of SiO2 over SiNx and vice versa, which provides a basis for developing future highly material-selective ALE processes.

Etching selectivity of SiO 2 to SiN using HF and methanol at higher pressure up to 900 Pa

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Selective Si Etching Using HCl Vapor

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Reactive ion etching of SiC thin films using fluorinated gases

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Effect of Input Power and Gas Pressure on the Roughening and Selective Etching of Sio2/Si Surfaces in Reactive Plasmas

MoS2-assisted chemical etching of silicon in an HF/H2O vapor

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects