Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)

Dry-etching properties of TiN for metal/high-k gate stack using BCl3-based inductively coupled plasma

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Selective Si Etching Using HCl Vapor

Influence of Deposition Temperature on the Structure and Optical Properties of HfO2 Thin Films

Study on HF Vapor-Phase Etching for Suspended Nano Structure Fabrication