Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Selective Si Etching Using HCl Vapor

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Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

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Etching selectivity of SiO 2 to SiN using HF and methanol at higher pressure up to 900 Pa

Atomistic description of Si etching with HCl

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Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

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Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Highly Selective Etch of Silicon Dioxide with Tungsten Hard Mask Deposited by PVD Process

Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry