Abstract:β-Ga2O3 is a promising ultra-wide bandgap semiconductor with melt-grown substrates that are scalable, particularly in the (001) orientation. In this study, we report on the heated-phosphoric acid etching of (001) β-Ga2O3. A wagon wheel pattern with spokes aligned to a range of specific crystallographic directions was fabricated on (001) β-Ga2O3. At 160 °C, the (001) etch rate was 1.47 μm/h, which is comparable to etch rates obtained via dry etch techniques. The etched (001) surface had a morphology that was smoother than an inductively coupled plasma etched surface. All spokes possessed relatively smooth sidewalls. Spokes oriented along the [100] direction exhibited minimal SiO2 mask undercut rates at lower etch temperatures and symmetric trapezoidal profiles with near vertical (010)-like sidewalls, which are ideal for device structures with a trench geometry. Spokes oriented along the [010] direction exhibited significant SiO2 mask undercut rates and asymmetric trapezoidal profiles with different sidewall angles. These spokes also possessed reduced sidewall angles, which is favorable for field management at device corners and edges. The etch process was used to realize a dense array of [100]-oriented trenches with a height of 1.5 μm, a base width of 2.0 μm, and a mask width of 0.8 μm. The work highlights the potential for ion damage-free, standalone heated-H3PO4 etching as a viable alternative to the dry etching of (001) β-Ga2O3 for high-performance device applications.

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Selective Si Etching Using HCl Vapor

Heated-H3PO4 etching of (001) β-Ga2O3

Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

Influence of HCl concentration in source solution and growth temperature on formation of α-Ga2O3 film via mist-CVD process

Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

Effect of RF power and gas ratio on the sidewall of β-Ga2O3 films via inductively coupled plasma etching

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

In situ Etching of \b{eta}-Ga2O3 using tert-Butyl Chloride in an MOCVD System

Wet etching in beta-Ga2O3 bulk single crystals

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Etching selectivity of SiO 2 to SiN using HF and methanol at higher pressure up to 900 Pa

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP