Abstract:The highly efficient manufacturing of atomic-scale smooth β-Ga 2 O 3 surface is fairly challenging because β-Ga 2 O 3 is a typical difficult-to-machine material. In this study, a novel plasma dry etching method named plasma-based atom-selective etching (PASE) is proposed to achieve the highly efficient, atomic-scale, and damage-free polishing of β-Ga 2 O 3 . The plasma is excited through the inductive coupling principle and carbon tetrafluoride is utilized as the main reaction gas to etch β-Ga 2 O 3 . The core of PASE polishing of β-Ga 2 O 3 is the remarkable lateral etching effect, which is ensured by both the intrinsic property of the surface and the extrinsic temperature condition. As revealed by density functional theory-based calculations, the intrinsic difference in the etching energy barrier of atoms at the step edge (2.36 eV) and in the terrace plane (4.37 eV) determines their difference in the etching rate, and their etching rate difference can be greatly enlarged by increasing the extrinsic temperature. The polishing of β-Ga 2 O 3 based on the lateral etching effect is further verified in the etching experiments. The Sa roughness of β-Ga 2 O 3 (001) substrate is decreased from 14.8 to 0.057 nm within 120 s, and the corresponding material removal rate reaches up to 20.96 μm/min. The polished β-Ga 2 O 3 displays significantly improved crystalline quality and photoluminescence intensity, and the polishing effect of PASE is independent of the crystal faces of β-Ga 2 O 3 . In addition, the competition between chemical etching and physical reconstruction, which is determined by temperature and greatly affects the surface state of β-Ga 2 O 3 , is deeply studied for the first time. These findings not only demonstrate the high-efficiency and high-quality polishing of β-Ga 2 O 3 via atmospheric plasma etching but also hold significant implications for guiding future plasma-based surface manufacturing of β-Ga 2 O 3 .

Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Towards atomic-scale smooth surface manufacturing of β -Ga 2 O 3 via highly efficient atmospheric plasma etching

Heated-H3PO4 etching of (001) β-Ga2O3

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Demonstration of MOCVD based in situ etching of β -Ga2O3 using TEGa

Wet etching in beta-Ga2O3 bulk single crystals

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux

Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions

Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Low-temperature deposition of β-Ga 2 O 3 thin films employing in situ pulsed laser-assisted RF sputtering system

Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Effect of RF power and gas ratio on the sidewall of β-Ga2O3 films via inductively coupled plasma etching

Wet Etching in β-Ga2O3 Bulk Single Crystal