Abstract:β−Gallium oxide (β−Ga2O3) is an ultra-wide bandgap (UWBG) semiconductor that is widely recognized as an ideal material for the fabrication of optoelectronic and high-voltage devices. As an advanced sputtering etching technology, focused ion beam (FIB) is increasingly used in the micron and nanoscale processing of semiconductor materials. In this paper, the influence of Ga FIB on β−Ga2O3 sputtering etching is systematically investigated from three parts, namely, the calibration of sputtering yield, the influence of process parameters on etched profiles and the effect of redeposition. Firstly, sputtering etching of β−Ga2O3 substrate was carried out under typical processing conditions with different incident angles, and the key parameter of sputtering yield was precisely calibrated. Further, Yamamura’s model is applied to fit the curve of sputtering yield as a function of incident angle. In addition, the sputtering yield of β−Ga2O3 is compared with those of GaNand Si under the same conditions, revealing the differences between them. Next, through line scan etching and trench structure etching experiments, this study analyzed the maximum etched depth, width, and etched volume variation with ion dose. The evolution of β−Ga2O3 trench structure is described and compared with GaN and GaAs, and from the perspective of redeposition effects, the reasons for the differences between the three in the sputtering etching process are analyzed. Lastly, the study investigated the impact of FIB process parameters on the redeposition effects of β−Ga2O3. Experimental results indicated that significant redeposition effect occurs when etching β−Ga2O3 with large single dwell time. Further analysis identified a specific range of single dwell times under different beam currents that reduce redeposition and prevents the formation of sidewall angles. These findings provide important data support for the high-resolution etching process of β−Ga2O3-based micro-nano devices using FIB technology, and also establish a reliable data foundation for related simulation studies.

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