Surface Pretreatment by Low-Temperature O$_{\text{2}}$ Gas Annealing for Performance Improvement in Pt/$\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes
Haodong Hu,Yibo Wang,Xiaole Jia,Yuewen Li,Bochang Li,Zhengdong Luo,Xiangyu Zeng,Cizhe Fang,Yan Liu,Jinggang Hao,Yiyang Shan,Hong Dong,Yue Hao,Genquan Han
DOI: https://doi.org/10.1109/ted.2023.3293456
IF: 3.1
2023-01-01
IEEE Transactions on Electron Devices
Abstract:We report a method for improving the electrical performance of Pt/ $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky barrier diodes (SBDs) through surface pretreatment using low-temperature O $_{\text{2}}$ gas annealing. We found that subjecting the $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ surface to 5 min of O $_{\text{2}}$ gas pretreatment at 400 $^{\circ}$ C before anode metal deposition resulted in an 18% increase in breakdown voltage ( $\textit{V}_{\text{br}}\text{)}$ and a 42% improvement in power figure-of-merit (PFOM) compared to control devices. X-ray photoelectron spectroscopy (XPS) analysis revealed that the O $_{\text{2}}$ gas pretreatment caused the oxidation of the Ga $^{\text{2}+}$ states on the surface, which increased the Schottky barrier height ( $\textit{q}\phi _{\text{b}}\text{)}$ and improved the ideality factor of the SBDs. However, when the pretreatment time was extended to 15 min, we observed the evidence of the reduction process of the oxidized Ga $^{\text{2}+}$ , which resulted in a degraded $\textit{V}_{\text{br}}$ and a reduced $\textit{q}\phi _{\text{b}}$ of the SBDs. Overall, our findings suggest that low-temperature O $_{\text{2}}$ gas annealing is a promising approach for engineering the Schottky interface of $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ SBDs and improving their performance.
engineering, electrical & electronic,physics, applied