Abstract:Monoclinic β-phase Ga 2 O 3 , the most thermodynamically stable phase, is an interesting material for power electronics applications. In this study, we present an efficient approach, diverging from existing methods, for the successful deposition of β-Ga 2 O 3 thin films at low substrate temperatures without any post-annealing. Instead of relying on high substrate temperatures, we supplied sufficient thermal energy to the substrate by directly irradiating it with a 1064 nm ytterbium pulsed laser during RF sputtering. This eliminated the need for post-annealing and significantly reduced processing time. It also allowed for excellent control over the crystal structure and crystallinity formation of the thin films by providing excellent particle energy through heat transfer on the surface. The X-ray diffraction (XRD) scan of the sample deposited by irradiating a pulse laser to the substrate shows only three peaks corresponding to (−201), (−402) and (−603) of β-Ga 2 O 3 , indicating superior crystalline quality. The sample deposited at 2.5 mTorr working pressure maintained a thin film thickness of 207 nm and a grain size of 40.07 nm, and the energy band gap of the thin films was measured in the range of 4.45–4.64 eV. XPS, Auger, and PL optical analysis observed characteristic core-level peaks of β-Ga 2 O 3 and the suppression of oxygen vacancies due to the high binding energy. The oxygen content increased by 4.39 %, resulting in the O/Ga ratio rising to 1.19, which leads to a positive shift in the O 1s binding energy. Consequently, we demonstrated the induction of phase transition of Ga 2 O 3 into a stable β phase by introducing an in-situ pulse laser process during low temperature RF sputtering. These results have significant potential in various applications and are expected to contribute significantly to technological advancements.

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