Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Controllable Growth of Gallium Oxide Nanowires by Chemical Vapor Deposition

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Growth of (SmxGa1−x)2O3 by molecular beam epitaxy

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3