Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

Growth of (SmxGa1−x)2O3 by molecular beam epitaxy

Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Growth of Cubic MgxZn1-xO Films and Characterization

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Low-temperature growth of Ga2O3 thin films on Si substrates by metal organic chemical vapor deposition and their electrical characteristics

Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy