Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

The influence of oxidizing agents on etching and passivation of silicon in KOH solution

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Effect of HF and NaOH Etching on Chemical and Structure Stability of Hollow SiOC Ceramics

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

MoS2-assisted chemical etching of silicon in an HF/H2O vapor

Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation