Abstract:Density-functional theory calculations were performed to investigate the adsorption of oxygen on 3C-SiC(111) and $(\overline{1}\overline{1}\overline{1})$ surfaces, including single O atom, double O atoms, and variable oxygen coverage adsorptions. We find that the bridge (BR) and on-top (OT) sites are the most stable adsorption sites for the (111) and $(\overline{1}\overline{1}\overline{1})$ surfaces, respectively. According to the two-dimensional potential energy surface achieved, the lowest continuous oxygen diffusion path over the whole surface seems to be $\text{BR}\ensuremath{\rightarrow}\text{H}3\ensuremath{\rightarrow}\text{BR}\ensuremath{\rightarrow}\text{BR}(\text{neighbor})\ensuremath{\rightarrow}\text{etc}\text{.}$ By studying the double O atoms adsorption on 3C-SiC(111) surface, we find that 2-BR is the most favorable configuration. By comparing adsorption energies and O-O distances with reference values, we get that there is an electronic induction effect, which helps to get a more stable adsorption structure, between neighboring O adatoms with small amount of negative charge, which favors a medium O-O distance. Spin-unrestricted first-principles molecular-dynamics calculations have been carried out to achieve more dynamic information and comprehensive understanding of the molecular oxygen adsorption on a 3C-SiC(111) surface. The results confirm our determined diffusion path and one of the preferred double atoms configuration. By studying the adsorption of oxygen at 3C-SiC(111) and $(\overline{1}\overline{1}\overline{1})$ surfaces as a function of oxygen coverage, we find that the adsorption energy initially increases [1/9--3/9 monolayer (ML)] then significantly decreases (3/9--6/9 ML) with increasing oxygen coverage and finally reaches a stable value (7/9--1.0 ML) for 3C-SiC(111) surface. For $3\text{C-SiC}(\overline{1}\overline{1}\overline{1})$ surface, the trend is similar to the (111) surface case; however the variation is small when the oxygen coverage is above 3/9 ML and the adsorption energy at 1/9 ML coverage is lower. By combining the results of adsorption energy, structure evolution, and electronic-density difference calculations, we get that the total adsorption energy is determined by the interaction between adatoms and surface reconstructions: attractive (respectively, repulsive) interactions between adatoms make the adsorption structure more (respectively, less) stable, i.e., it gets a larger (respectively, smaller) adsorption energy; however, surface reconstructions can eliminate the stress caused by repulsive interactions between adatoms and make the adsorption structure to be stable.

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Theoretical Insights into the Mechanism of CO2 Chemisorption and Subsequent CO Desorption on Char Surface with Zigzag Active Sites

Adsorption of atomic and molecular oxygen on 3C-SiC(111) and ( 1 ¯ 1 ¯ 1 ¯ ) surfaces: A first-principles study

First-principles Investigation on Initial Stage of 2H-Sic(001) Surface Oxidation

Adsorption and surface diffusion of oxygen on 3C and 2H-SiC polytypes: Numerical studies

Adsorption Of Atomic And Molecular Oxygen On 3c-Sic(111) And ((111)Over-Bar) Surfaces: A First-Principles Study

Insight into the Initial Oxidation of 4H-Sic from First-Principles Thermodynamics

H2o And O-2 Co-Adsorption On 3c-Sic (111) By First-Principle Calculations: The Role Of Water In Initial Oxidation

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

C-O Bond Activation and Splitting Behaviours of CO2 on a 4H-Sic Surface: a DFT Study.

Initial Oxidation of 3C-Sic (111) in Oxidizing Atmosphere Containing Water Vapor: H2O Adsorption from First-Principles Calculations

The Initial Oxidation of the 4H-Sic (0001) Surface with C-related Point Defects: Insight by First-Principles Calculations

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

Adsorption Of Triplet O-2 On Si(100): The Crucial Step In The Initial Oxidation Of A Silicon Surface

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

The rate-limiting step in the thermal oxidation of silicon carbide

Adsorption of Oxygen Atom on MoSi 2 (110) Surface

Theoretical Study of O-2 Molecular Adsorption and Dissociation on Silicon Carbide Nanotubes