Abstract:Understanding surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures is crucial to fabricate high-performance SiC-based devices. However, the role of oxygen in the evolution mechanism of SiC surface at atomic scale has not been comprehensively elaborated. Here, we reveal the manipulation effect of oxygen on the competitive growth of thermal oxidation SiO2 (TO-SiO2) and thermal chemical vapor deposition SiO2 (TCVD-SiO2) on the 4H-SiC substrate at 1500 °C. TO-SiO2 is formed by the thermal oxidation of SiC, in which the substrate undergoes layer-by-layer oxidation, resulting in an atomically flat SiC/TO-SiO2 interface. TCVD-SiO2 growth includes the sublimation of Si atoms, the reaction between sublimated Si atoms and reactive oxygen, and the adsorption of gaseous Si x O y species. A relatively high sublimation rate of Si atoms at SiC atomic steps causes the transverse evolution of the nucleation sites, leading to the formation of nonuniform micron-sized pits at the SiC/TCVD-SiO2 interface. The low oxygen concentration favors TCVD-SiO2 growth, whose crystal quality is much better than that of TO-SiO2 due to the high surface mobility in the thermal CVD process. We further achieve the epitaxial growth of graphene on 4H-SiC in an almost oxygen-free reaction atmosphere. Additionally, ReaxFF reactive molecular dynamic simulation results illustrate that the decrease in oxygen concentration can promote the growth kinetics of SiO2 on single crystal SiC from being dominated by thermal oxidation to being dominated by thermal CVD.

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

Metal-Free, Room-Temperature Oxygen-Atom Transfer in the N 2 O/CO Redox Couple as Catalyzed by [Si 2 O x ] .+ (x=2-5).

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

The rate-limiting step in the thermal oxidation of silicon carbide

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Insight into the Initial Oxidation of 4H-Sic from First-Principles Thermodynamics

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

First-principles Investigation on Initial Stage of 2H-Sic(001) Surface Oxidation

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Atomic Simulation and Experimental: Oxidation Protective SiC Coating Produced by Chemical Vapor Deposition and Pack Cementation for Carbon/carbon Composites

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Atomistic Aspects of Silicide Reactions Studied with STM

Spontaneous Dissociation of Co2(CO)8 and Autocatalytic growth of Co on SiO2 : A Combined Experimental and Theoretical Investigation

Oxidation Pattern of Small Silicon Oxide Clusters: Structures and Stability of Si6On (n = 1-12).

Adsorption and surface diffusion of oxygen on 3C and 2H-SiC polytypes: Numerical studies

The Initial Oxidation of the 4H-Sic (0001) Surface with C-related Point Defects: Insight by First-Principles Calculations

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

Ab Initio Theoretical and Photoemission Studies on Formation of 4H-Sic(0001) SiO2 Interface