Abstract:Silicon carbide (SiC) MOSFETs are expected to replace Si bipolar transistors partially in applications such as automotive, railroad, and other high-voltage applications. But the resistance of the MOS inversion layer channel limits the performance of MOSFETs. It has been clarified that the effective carrier density in the inversion channel is significantly reduced by the carrier trapping by the high density of defect states distributed nearby SiO2/SiC interface. In this study, our understanding of oxidation and nitridation reactions of SiC for designing the gate stack formation processes to improve the MOS interface characteristics is presented. Choosing SiO 2 as a gate dielectric for SiC is favorable from various aspects including its ability to form a thermodynamically stable interface with SiC, which is free of reactions at the process temperature. However, from a microscopic point of view, Si-O bond alone cannot cover the whole surface of SiC and the excess C atoms on the surface causes the formation of defect states. One of the possible approaches has been employing an appropriate thermal oxidation condition to enhance the excess carbon elimination by forming CO. For example, we have experimentally demonstrated a significant reduction of D it by employing high-temperature thermal oxidation with a rapid heating furnace [1]. However, such approach seems to bring a serious drawback such as defect formation in the surface region of SiC, experimentally detected by a lattice distortion in the beneath of SiO 2 after high-temperature oxidation [2]. One of the possible reasons for such deterioration would be an invasion of activated oxygen atoms into the surface region of SiC [3]. A possible approach to avoid such drawback of high-temperature oxidation process would be utilizing H 2 O vapor for the formation of SiO 2 /SiC interface at relatively lower temperature while avoiding the damages on SiC surface [4], since H 2 O oxidation was found to be advantageous to remove CO more efficiently than O 2 oxidation even at low temperature. On the other hand, another approach to passivate SiC surface is the surface nitridation technique, which is the most common way in industry to fabricate SiC MOS interface typically achieved by high-temperature annealing in NO gas [5]. Nitridation can replace the topmost C sites with N without inducing significant distortion in the SiC surface structure, to suppress the C-related defect formation at the interface. The advantage of this reaction is that it proceeds self-limited manner and N atoms are introduced only on the topmost surface of SiC. Note that NO gas triggers the surface nitridation by removing the surface C atoms in the form of CO by oxidation. Actually, a very similar reaction occurs even when SiC is annealed in N 2 [6] ambient with a slight addition of O 2 . We experimentally found that the surface N density saturated with different values when we employed various N 2 +O 2 atmosphere with different O 2 concentration. Therefore we setup a simple model to describe the saturation behavior, which is determined by the balance between the rate of N uptake (N + ) and the rate of N desorption (N ‒ ) mainly due to the oxidation reaction [7]. This model was found to represent the time-dependent change of surface N density well, by assuming that N + remained constant during the reaction and N ‒ was proportional to both the reaction rate of interface oxidation and the surface N density [8]. Based on this simplified model, it is possible to design a process to tune the N density. By choosing appropriate temperature and oxygen partial pressure we can increase N density at the surface to minimize the interface trap density. Further improvement of surface N density would be achieved by further controlling of the blance between N uptake and N desorption reactions. As we have discussed so far, the role of materials science to clarify the interface phenomena is significantly important to achieve a further improved SiC MOS interface characteristics for the next generation SiC power MOSFET process technology. [1] R. Kikuchi and K. Kita, Appl. Phys. Lett. 105, 032106 (2014). [2] A. D. Hatmanto and K. Kita, Appl. Phys. Express 11, 011201 (2018). [3] A. D. Hatmanto and K. Kita, Jpn. J. Appl. Phys. 59, SMMA02 (2020). [4] H. Hirai and K. Kita, Appl. Phys. Lett. Appl. Phys. Lett. 113, 172103 (2018). [5] J. Rozen et al., J. Appl. Phys. 105, 124506 (2009). [6] A.Chanthaphan et al., AIP Adv. 5, 097134 (2015). [7] T. Yang and K. Kita, Jpn. J. Appl. Phys. 61, SC1077 (2022). [8] T. Yang and K. Kita, SSDM 2023, Chiba.

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Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

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Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

(Invited) Design of Surface Oxidation and Nitridation Reactions on 4H-SiC for the Advanced SiC Gate Stack Formation Processes

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

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New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Structure and energetics of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems revealed by first-principles calculations: Defects in SiC, SiO$_{\rm 2}$, and just at their interface

Molecular insight of the interface evolution of silicon carbide under hyperthermal atomic oxygen impact

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON