Abstract:We employed the Reactive-Force-field (ReaxFF) based molecular dynamics simulations to investigate the lithiation mechanisms and anisotropic lithiation behaviors of the Si-based anode during the lithiation processes. In order to accurately predict the relative lithiation kinetics on different surface facets of c -Si, we have developed new ReaxFF parameters for the Li-Si system based on first-principles calculations. Our results demonstrated that the lithiation kinetics on the Si(110) and (112) surfaces manifestly outperformed those occurred on the Si(100) and (111) surfaces. The lithiation reactions on the Si(110) and (112) surfaces tend to proceed through a ledge mechanism involving the layer-by-layer peeling of the {111} atomic facets. However, the lithiation reaction on the Si(100) surface is more likely to occur via the layer-by-layer etching of the {100} atomic facets. The discrepancy in the lithiation kinetics among the c -Si(100), (110) and (112) substrates was mainly ascribed to the variation in the compressive stresses that developed within the phase boundary upon lithiation. Regarding the Si(111) surface, the significantly slower lithiation kinetics than other surface facets were primarily attributed to the presence of a considerably larger barrier for Li insertion into the subsurface region to initiate the lithiation reaction. Furthermore, the order of the energy barriers for Li insertion into different c -Si surfaces was determined as follows: Si(111)>>(100)>(110)>(112), indicating that Li atoms tend to migrate into c -Si predominantly through the (110) and (112) surfaces upon lithiation. Consequently, lithiation reactions would occur majorly on the (110) and (112) surfaces due to the much lower compressive stresses that developed within the phase boundary and smaller Li insertion barriers than other surface facets, resulting in the observed anisotropic lithiation behaviors of the c -Si nanomaterials.

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Characterization of Dislocation Etch Pits by Molten KOH Etching in N- and P-Type 4h–sic Epilayers Doped by Ion Implantation

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects*

Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Hydrogen etching of 4H–SiC(0001) facet and step formation

Atomistic study on the origins of the anisotropic lithiation behaviors of the silicon anode using the reactive force field based molecular dynamics simulations

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study