Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

Jinying Yu,Xianglong Yang,Yan Peng,Xiaobo Hu,Xiwei Wang,Xiufang Chen,Xiangang Xu

DOI: https://doi.org/10.1039/d0ce01489c

IF: 3.756

2021-01-01

CrystEngComm

Abstract:A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Yafei Kong,Xinyu Xie,Rong Wang,Xiaodong Pi,Deren Yang,Lingmao Xu

DOI: https://doi.org/10.1016/j.mssp.2024.108787

IF: 4.1

2024-01-01

Materials Science in Semiconductor Processing

Abstract:This work proposes an effective etching method for highly doped n-type 4H-SiC by combining electrochemical reactions and molten alkali etching. By employing our developed method, threading mixed dislocation (TMDs) and threading screw dislocations (TSDs) can be distinctly visualized as hexagonal etching pits of varying sizes. The slightly smaller threading edge dislocations (TEDs) appear as roughly circular etching pits, while basal plane dislocations (BPDs) are revealed as characteristic seashell-shaped pits. Additionally, we provide a reaction equation that elucidates the mechanism of the electrochemical etching process, thus sparking a new investigation into the discrimination of dislocations under molten alkali conditions. By applying a positive voltage to the wafer, we ensure a continuous supply of holes crucial for the reaction, thereby maintaining both the etching rate and the selectivity towards defects. This approach not only enhances the efficiency of the etching process but also provides a more accurate and reliable method for characterizing and understanding the dislocation properties of highly doped n-type 4H-SiC wafers.
Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Guang Yang,Hao Luo,Jiajun Li,Qinqin Shao,Yazhe Wang,Ruzhong Zhu,Xi Zhang,Lihui Song,Yiqiang Zhang,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/43/12/122801

2022-01-01

Journal of Semiconductors

Abstract:Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-Si C), which are routinely used to evaluate the quality of 4H-Si C single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-Si C can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs) and basal plane dislocations(BPDs) in 4H-Si C. In n-type 4H-Si C, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-Si C are in the ranges of 27°-35°, 8°-15° and 2°-4°, respectively. In semi-insulating 4H-Si C, the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°-34° and 21°-24°, respectively. The inclination angles of dislocation-related etch pits are independent of the etching duration, which facilitates the discrimination and statistic of dislocations in 4H-Si C. More significantly, the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs. This enables to distinguish TMDs from TSDs in 4H-Si C.
Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Guang Yang,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/45/1/012502

2024-01-20

Journal of Semiconductors

Abstract:Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide (4H-SiC), which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals. However, the etching mechanism of 4H-SiC is limited misunderstood. In this letter, we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching, X-ray photoelectron spectroscopy (XPS) and first-principles investigations. The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol, respectively. The molten-KOH etching rate of the C face is higher than the Si face. Combining XPS analysis and first-principles calculations, we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH. The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable, and easier to be removed with molten alkali, rather than the C face being easier to be oxidized.

physics, condensed matter
Microscale pattern etch of 4H–SiC by inductively coupled plasma

Shiwei Zhuang,Jiale Tang,Zhiqiang Gu,Dongchen Che,Dongdong Hu,Lu Chen,Kaidong Xu

DOI: https://doi.org/10.1007/s10854-019-02232-w

2019-09-24

Abstract:SiC is commonly used in the field of high temperature, high frequency, high power and radiation-resistant semiconductor devices and ultraviolet photodetectors due to its excellent photoelectric characteristics. Plasma etching is one of the key processes in the fabrication of SiC devices. However, it is difficult to obtain a smooth and vertical etch profile due to the subtrench effect when the conventional inductively coupled plasma (ICP) is used to etch SiC with small-size patterns (such as 1 μm holes or trenches), thus affecting the subsequent process and device performance. To study microscale pattern etch of 4H–SiC, we used different mask and etch gas systems for ICP etching. The etch profile was characterized using SEM. When the chlorine gas was used, there was no subtrench but a very inclined angle between the SiC bottom and sidewalls, which is hard to improve. When we used photoresist (PR) mask–HBr system, sidewall deposition happened. SiO2 mask–HBr/Ar system could help to etch different angles but has a limitation angle of up to 80°. Compared to above systems, the etching profile was much more vertical when HBr/SF6/O2 was used. After many rounds of process debugging, we obtain a good etching profile with flat and vertical sidewalls, no subtrench in the bottom and no damage of the SiO2 mask. Our work shows a good way of microscale pattern SiC etching by ICP.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Shunda Zhan,Bangyan Dong,Hongqiang Wang,Yonghua Zhao

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.04.012

IF: 5.7

2021-08-01

Journal of the European Ceramic Society

Abstract:Bulk micromachining of single-crystal SiC has been challenging due to its extreme stability both mechanically and chemically. To address this issue, a novel tool-based electrolytic plasma etching method is proposed, with which micropatterns and micro-holes are fabricated in SiC in a hydrofluoric acid-free aqueous solution with no need for masks. The material removal is the result of the combined effects of electrolytic plasma chemistry and physics. The chemistry refers to the reaction of Si with hydroxyl radical to form various SiOx and with H to form silanes, and the reactions of C to form volatile carbon oxides or hydrocarbons, all of which are accomplished and enhanced under the electrolytic plasma atmosphere. Besides, the local high temperature of plasma thermally promotes the evaporation or dissolution of SiO2 in NaOH solution. The tool-based electrolytic plasma etching method provides alternative approaches for the fabrication of SiC-based MEMS and devices.

materials science, ceramics
Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Xiaoshuang Liu,Rong Wang,Junran Zhang,Yunhao Lu,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1361-6463/ac9535

2022-01-01

Journal of Physics D Applied Physics

Abstract:In this work, the anisotropic deformation and anisotropic mechanical properties of 4H silicon carbide (4H-SiC) single crystal wafers are proposed by using nanoindentation. The C face of a 4H-SiC wafer has higher hardness and lower fracture toughness than those of the Si face. Because the deformation of 4H-SiC is assisted by the nucleation and slip of basal plane dislocations (BPDs), especially the slip of Si-core partial dislocations (PDs) of the BPDs, the nucleation and slip of the Si-core PDs in the Si face of 4H-SiC is easier than those in the C face, which releases the nanoindentation-induced stress and results in the decrease of the hardness and increase of the fracture toughness of the Si face of 4H-SiC wafers. Due to the hexagonal lattice of 4H-SiC, the hardness along < 1<(1)over bar>00 > of 4H-SiC is higher than that along < 11<(2)over bar>0 >, but the fracture toughness along the < 1<(1)over bar>00 > is lower than that along the < 11<(2)over bar>0 >, as a result of the enhanced glide of dislocations along the most closely-packed direction. The insights gained in this work are expected to shed light on the optimization of the mechanical processing of 4H-SiC wafers.
Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Hao Luo,Jiajun Li,Guang Yang,Ruzhong Zhu,Yiqiang Zhang,Rong Wang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1021/acsaelm.1c01330

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:Despite the decades of development of the single-crystal growth and homoepitaxy of 4H silicon carbide (4H-SiC), high-density threading dislocations (TDs) still remain in 4H-SiC. In this work, we show that the diameters, depths, and inclination angles of molten-alkali etched pits can be employed to discriminate threading edge dislocations (TEDs), threading screw dislocations (TSDs), and threading mixed dislocations (TMDs) in 4H-SiC. The formation of etch pits of TEDs, TSDs, and TMDs during molten-alkali etching is found to be assisted by the dislocation line, dislocation step, and successively dislocation line and step, respectively. By inspecting the surface potentials of n-type 4H-SiC with Kelvin probe force microscopy (KPFM), we show that both TSDs and TEDs behave as donors in n-type 4H-SiC, which gives rise to charge depletion at TDs in n-type 4H-SiC. TDs are found to participate in the broad band D1 luminescence of 4H-SiC, as evidenced by the fact that the microphotoluminescence (micro-PL) intensities at the centers of TDs are stronger than those in dislocation-free regions of 4H-SiC. Understandings gained in this work may help the optimization of n-type 4H-SiC by manipulating the electronic and optical properties of TDs.
Hydrogen etching of 4H–SiC(0001) facet and step formation

Rui Li,Kaimin Zhang,Yi Zhang,Zhenzhen Zhang,Peixuan Ji,Chengqian Shi,Danni Hao,Yipeng Zhang,Ramiro Moro,Yanqing Ma,Lei Ma

DOI: https://doi.org/10.1016/j.mssp.2022.106896

IF: 4.1

2022-06-18

Materials Science in Semiconductor Processing

Abstract:SiC has attracted much interest due to its vast applications in high power, high frequency and radiation-hardened electronics at high temperatures. Although the growth and processing technology for SiC wafers has matured, scratches created during surface preparation will unavoidably deteriorate both device performances and the quality of materials which are fabricated on it. Hydrogen etching has been proposed as an effective approach to obtain ideal SiC surfaces with large atomically flat steps. Here, we reported a systematical investigation on the effects of processing parameters to the hydrogen etching of 4H–SiC (0001). Accordingly, a new two-step etching method was developed with a specifically designed crucible to take advantage of the found correlation between those parameters and the terrace features. The method demonstrates high efficiency to realize atomically uniform SiC surface morphology with more than 70% coverage of the sample surface. It offers a possible route for large scale industrial SiC wafer planarization.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology

Dailei Zhu,Wenbo Luo,Gengyu Wang,Limin Wan,Yuedong Wang,Shitian Huang,Yao Shuai,Chuangui Wu,Wanli Zhang

DOI: https://doi.org/10.1016/j.apsusc.2024.159384

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:The Silicon Carbide (SiC) composite substrate fabricated by crystal-ion-slicing (CIS) technology can be an excellent material platform to realize a variety of microelectronic device functions. The difference in the surface morphology of the exfoliated films under different thermal excitation conditions was found in research. In order to explore the different cleavage behaviors resulting the differences, the basic models of defect evolution during the fabrication of SiC film by CIS technique is established based on AFM, Raman, XRD and TEM material characterizations, which can be divided into detachment, aggregation, growth, and concatenation stages. Combining the molecular dynamics simulation results and defect evolution models, the difference of the cleavage behavior leading to different surface topography under different anneal thermal excitations can be attributed to the different H2 bubble nucleation rate. The work in this paper investigates the fundamental physicochemical phenomena of defect evolution and crystal cleavage in CIS technology, and guides the improvement of heat treatment process, which is beneficial to achieve neat cleavage for the transfer of SiC single crystal film and to realize available heterogeneous integration of SiC single crystal film.
Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

Lin Dong,Liu Zheng,Xingfang Liu,Feng Zhang,Guoguo Yan,Xiguang Li,Guosheng Sun,Zhanguo Wang

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.243

2013-01-01

Abstract:We have studied the defects on 4H-SiC substrates and epilayers by using molten KOH defect selective etching. It is found that adding Na2O2 into molten KOH at the etched temperature enables the revelation of dislocations on n(+) and semi-insulating substrates, whereas purely molten KOH is sufficient to obtain good etched pattern on p(+) substrates. Related statistical data on dislocation densities of n(+), p(+) and semi-insulating substrates are also presented. The morphological defects commonly observed on the epilayers are finally investigated and it is shown that some important structural features can be revealed by molten KOH method.
Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Wenhao Geng,Guang Yang,Xuqing Zhang,Xi Zhang,Yazhe Wang,Lihui Song,Penglei Chen,Yiqiang Zhang,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1674-4926/43/10/102801

2022-10-28

Journal of Semiconductors

Abstract:In this work, we propose to reveal the subsurface damage (SSD) of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching. Under UV illumination, SSD acts as a photoluminescence-black defect. The selective photo-chemical etching reveals SSD as the ridge-like defect. It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion. The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines, which are typical features of scratches. This means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC wafers. SSD is incorporated into 4H-SiC wafers during the lapping, rather than the chemical mechanical polishing (CMP).

physics, condensed matter
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

Shan Shan Hu,Shuai Fang,Ya Fei Liu,Qian Yu Cheng,Hong Yu Peng,Ze Yu Chen,Yu Han Gao,Chao Gao,Balaji Raghothamachar,Michael Dudley

DOI: https://doi.org/10.4028/p-6dx2v3

2023-05-27

Materials Science Forum

Abstract:Publication date: 26 May 2023 Source: Materials Science Forum Vol. 1089 Author(s): Shan Shan Hu, Shuai Fang, Ya Fei Liu, Qian Yu Cheng, Hong Yu Peng, Ze Yu Chen, Yu Han Gao, Chao Gao, Balaji Raghothamachar, Michael Dudley In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or larger. Thermal modeling has shown that occurrence of prismatic slip is attributed to increased radial thermal gradients. While X-ray topography can be used to characterize the presence and extent of prismatic slip, the feasibility of using the chemical etching method to assess the extent of prismatic slip in an industrial setting is investigated. The distribution of scallop shaped etch pits oriented along the directions that correspond to prismatic dislocations, correlate well with the results of the thermal model that predicts the occurrence of prismatic slip dislocations. This capability of the etch pit method to characterize prismatic slip can be used to manage radial thermal gradients during PVT growth.
Dislocations in 4H Silicon Carbide

Jiajun Li,Guang Yang,Xiaoshuang Liu,Hao Luo,Lingbo Xu,Yiqiang Zhang,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang

DOI: https://doi.org/10.1088/1361-6463/ac8a58

2022-08-19

Abstract:Owning to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for the applications of electrical vehicles, 5G communications and new-energy systems. Although the industrialization of 150 mm 4H-SiC substrates and epitaxial layers has been successfully achieved, the existence of high density of dislocations is one of the most important bottlenecks for advancing the device performance and reliability of 4H-SiC based high-power and high-frequency electronics. In this topical review, the classification and basic properties of dislocations in 4H-SiC wafers and epitaxial layers are introduced. The generation, evolution and annihilation of dislocations during the single-crystals growth of 4H-SiC boules, the processing of 4H-SiC wafers, as well as the homoepitaxy of 4H-SiC layers are systematically reviewed. The characterization and discrimination of dislocations in 4H-SiC are presented. The effect of dislocations on the electronic and optical properties of 4H-SiC wafers and epitaxial layers, as well as the role of dislocations on the device performance and reliability are finally presented. This topical review provides insight into the fundamentals and evolution of dislocations in 4H-SiC, and is expected to provide inspiration for further manipulation of dislocations in 4H-SiC.

physics, applied
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment

Hong Yu Peng,Yu Han Gao,Zhi Qiang Shi,Ya Ni Pan,Can Zhu,Chao Gao,Balaji Raghothamachar,Michael Dudley

DOI: https://doi.org/10.4028/p-u3d2yi

2024-08-24

Defect and Diffusion Forum

Abstract:Publication date: 22 August 2024 Source: Defect and Diffusion Forum Vol. 434 Author(s): Hong Yu Peng, Yu Han Gao, Zhi Qiang Shi, Ya Ni Pan, Can Zhu, Chao Gao, Balaji Raghothamachar, Michael Dudley Dislocation behaviors after post-growth thermal treatment were investigated by X-ray topography and KOH etching. Generation of prismatic dislocations were observed in X-ray topography, and density of basal plane dislocations (BPDs) increases with annealing temperature and radial temperature gradient. Distribution of newly generated BPDs in the wafer after thermal treatment is correlated to the resolved shear stress arising from radial temperature gradient.
Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Hirohumi Matsuhata,Hirotaka Yamaguchi,Takashi Sekiguchi,Bin Chen,Masayuki Sasaki,Toshiyuki Ohno,Takuma Suzuki,Tetsuo Hatakeyama,Takashi Tsuji,Yoshiyuki Yonezawa,Kazuo Arai

DOI: https://doi.org/10.1002/eej.22871

2016-01-01

Electrical Engineering in Japan

Abstract:SUMMARYCurrent 4H‐SiC wafers contain certain amount of dislocations, stacking faults, and other lattice‐defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg–Barrett X‐ray topography, we have applied this useful observation technique to 4H‐SiC technology to solve various technological issues. Appearances of scratch‐like surface morphology after epi‐film growth on very flat substrate surface by chemomechanically polish were examined by this technique, and the mechanism was discussed. Analyses of dislocation structure evolutions during epi‐film growth and also basal‐plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading‐screw dislocations on reliability of MOS structures and on current leakage in pn‐junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H‐Sic industries were obtained.
A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Weijia Guo,Laurence Michael M Calija,Peng Xu,Kui Liu,Senthil Kumar A

DOI: https://doi.org/10.1016/j.vacuum.2021.110292

IF: 4

2021-08-01

Vacuum

Abstract:Atmospheric-pressure (AP) plasma sources have attracted researchers in many engineering fields, due to its low cost and easy handling. The AP plasma technique has been successfully applied on the surface figuring and texturing of Si, fused silica, RS-SiC, and SiC, etc. However, these studies focus more on better control for surface figuring of the substrate. The understanding of how the Si surface roughening or smoothing is occurred during the AP plasma etching using He-based CF4 mixture gas has seldom been reported. The present study starts from a parametric study of O2 addition concentration to He-based CF4 plasma. A groove is initially etched on a single-crystal silicon wafer by the CCP-type parallel-plate plasma etcher, to study the etching rate, surface morphology, material removal characteristics, and surface roughness evolution after the plasma etched removal. It is revealed that the material removal with a typical profile is achieved without introducing further damage. At the same time, the surface finish and surface integrity were enhanced by the AP plasma. The underlying mechanism of the process was investigated. Additionally, the optimized gas composition is then applied to the larger area etching by the computer-controlled scanning with different feed rates. Based on the experimental results, the surface evolution during the plasma etching process is revealed in detail. The surface removal profile also demonstrates that this method can provide an alternative way to achieve damage-free material removal for a larger area substrate by the duplicating of the typical removal profile with different etching path.

materials science, multidisciplinary,physics, applied
Application of PECVD SiC in glass micromachining

Haixia Zhang,Hui Guo,Zhe Chen,Guobing Zhang,Zhihong Li

DOI: https://doi.org/10.1088/0960-1317/17/4/014

2007-01-01

Journal of Micromechanics and Microengineering

Abstract:In this paper, we present an application of SiC for Pyrex glass micromachining in the MEMS fabrication process. SiC has very high etch resistance in most acid and alkaline solutions due to its chemical inertness. The PECVD (plasma-enhanced chemical vapor deposition) process allows deposition of SiC at a low temperature (200-400 degrees C), which makes SiC have better compatibility with IC fabrication. The PECVD SiC film was characterized and the process was optimized accordingly. An annealing process was developed to reduce the residual stress and modify the interface adhesion, and therefore the mask defects as well as the undercut of glass were reduced. In our experiment, an etch angle of 41. was achieved with an annealed SiC mask. Finally, microchannels on the glass substrate utilizing PECVD SiC mask were demonstrated, and SiC microstructures, such as membranes and clamed-clamed beams, were successfully fabricated by this micromachining technology.
Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Yuhang Li,Zhe Zhang,Qi Song,Haiyan Shi,Yu Hou,Song Yue,Ran Wang,Shunshuo Cai,Zichen Zhang

DOI: https://doi.org/10.1016/j.jmst.2023.09.046

2024-01-01

Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Julian A. Michaels,Lukas Janavicius,Xihang Wu,Clarence Chan,Hsieh‐Chih Huang,Shunya Namiki,Munho Kim,Dane Sievers,Xiuling Li

DOI: https://doi.org/10.1002/adfm.202103298

IF: 19

2021-06-10

Advanced Functional Materials

Abstract:Abstract Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology by serving as hosts for quantum states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma‐based reactive ion etching methods; however, these could have significant undesirable effects for electronic and photonic devices. This paper presents a plasma‐free, open‐circuit, photo‐induced metal‐assisted chemical etch for fabricating micro and nanoscale features without the inherent high energy ion‐related surface damage. The method presented herein utilizes above bandgap ultraviolet light, patterned noble metal (Pt), and a solution consisting of an oxidant potassium persulfate (K 2 S 2 O 8 ) and an acid, hydrofluoric acid, to spatially define the etching morphology. The parameter space is comprehensively explored to demonstrate the controllability and versatility of this technique to produce ordered arrays of micro and nanoscale SiC structures with porous or solid sidewalls, and to elucidate the etching mechanism.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

Shuo Zhang,Xiao Cheng,Junyun Chen

DOI: https://doi.org/10.1016/j.apsusc.2022.152944

IF: 6.7

2022-06-01

Applied Surface Science

Abstract:Compared with the conventional orthogonal cutting, the oblique nano-cutting of 6H-SiC by tilting the tool at different angles, i.e., the tool inclination angle, is systematically investigated via molecular dynamics (MD) simulations. Focusing on the deformation mechanism, surface deformation including elastic recovery and deformation layer thickness is studied considering the edge ovalization effect in the cutting plane of oblique cutting. Moreover, the variation of cutting force is also analyzed, which relates to the improvement of processing accuracy and the structural phase transition. In particular, the transition path is clarified by coordination number analysis and virtual X-ray diffraction, which shows that the amorphization process is achieved via an initial transformation from the wurtzite structure to a fivefold coordinated orthorhombic intermediate structure, and then to an amorphous phase. Finally, dislocation analysis reveals that the basal dislocation systems dominate the dislocation behaviors, while in oblique nano-cutting especially at the tool inclination angle of 30°, the dislocation system of {0001} (i.e., the basal 1/3 Shockley partial dislocation of 6H-SiC) is more activated due to the inclined-cutting-edge-derived shear stress. Furthermore, stacking faults are also formed beneath the bottom of cutting grooves due to the slip upon fivefold coordinated atoms plane.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films

Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Microscale pattern etch of 4H–SiC by inductively coupled plasma

A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Hydrogen etching of 4H–SiC(0001) facet and step formation

The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology

Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

Dislocations in 4H Silicon Carbide

Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Application of PECVD SiC in glass micromachining

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting