Abstract:Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology, SiO$_2$ is widely used as an insulator in combination with high-$k$ dielectrics such as HfO$_2$, demanding fabrication of ultra-thin interfacial layers. The classical standard model derived by Deal and Grove accurately describes the oxidation of Si in a progressed stage, however, strongly underestimates growth rates for thin oxide layers. Recent studies report a variety of oxidation mechanisms during the growth of oxide films in the range of \SI{10}{\angstrom} with various details still under debate. This paper presents a first-principles based approach to theoretically assess the thermal oxidation process of the technologically relevant Si(100) surfaceduring this initial stage. Our investigations range from the chemisorption of single O$_2$ molecules onto the $p(2\times2)$ reconstructed Si surface to oxidized Si surface layers with a thickness of up to \SI{20}{\angstrom}. The initially observed enhanced growth rate is assigned to barrierless O$_2$ chemisorption events upon which the oxygen molecule dissociate. We present strong evidence for an immediate amorphization of the oxide layer from the onset of oxidation. Surface reactions dominate until the surface is saturated with oxygen and separated from the Si substrate by a \SI{5}{\angstrom} transition region. The saturated surface becomes inert to dissociative reactions and enables the diffusion of molecular oxygen to the \interface interface as assumed within the Deal-Grove model. Further oxidation of the Si substrate is then provided by O$_2$ dissociations at the interface due to the same charge transfer process responsible for the chemisorption at the surface.

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Insight into the Initial Oxidation of 4H-Sic from First-Principles Thermodynamics

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

The Initial Oxidation of the 4H-Sic (0001) Surface with C-related Point Defects: Insight by First-Principles Calculations

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

First-principles Investigation on Initial Stage of 2H-Sic(001) Surface Oxidation

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study

Initial Oxidation of 3C-Sic (111) in Oxidizing Atmosphere Containing Water Vapor: H2O Adsorption from First-Principles Calculations

Ab Initio Theoretical and Photoemission Studies on Formation of 4H-Sic(0001) SiO2 Interface

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects*

Adsorption and surface diffusion of oxygen on 3C and 2H-SiC polytypes: Numerical studies

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

Atomic Simulation and Experimental: Oxidation Protective SiC Coating Produced by Chemical Vapor Deposition and Pack Cementation for Carbon/carbon Composites

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

Structure and energetics of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems revealed by first-principles calculations: Defects in SiC, SiO$_{\rm 2}$, and just at their interface