Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

First-principles Investigation on Initial Stage of 2H-Sic(001) Surface Oxidation

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Initial Subsurface Incorporation of Oxygen into Ru(0001): A Density Functional Theory Study

Initial Subsurface Incorporation of Oxygen into Ru(0001): A Density Functional Theory Study.

Ab Initio Calculation of the Evolution of [SiN4‐nOn] Tetrahedron during β‐Si3N4(0001) Surface Oxidation

Identifying atomic geometry and electronic structure of (2×3)-Sr/Si(100) surface and its initial oxidation

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Interaction Of Tetraethoxysilane With Oh-Terminated Sio2 (001) Surface: A First Principles Study

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals