Abstract:First-principles calculation based on density-functional theory (DFT) were employed to investigate H2O adsorption on 3C-SiC (111) surface for understanding atomic initial oxidation mechanism of CVD-SiC in oxidizing atmosphere containing water vapor. Firstly, Si-terminated 3C-SiC (111) slabs with intense surface states were constructed. Then, adsorption energy calculations demonstrated that the optimized structure of total dissociation of H2O molecule (SO structure) is relatively stable. The charge density difference plots of the corresponding O and Si atoms also indicated that the O and Si atoms in SO structure are more stable than those in the other structures. Besides, all orbital energies of relevant atoms in three stable structure shifted to the lower energy levels. From energy barrier analysis, the complete dissociation of H2O molecule on the SiC (111) surface had to overcome higher energy barrier than the partial dissociation, meaning that H2O molecules preferred to partially dissociate into OH radicals and H atoms on Si-terminated 3C-SiC (111) surface. By the analyses of geometry, charge transfer and bond population, O-H center dot center dot center dot O hydrogen bond network gradually was generated on the surface with increasing H2O coverage. Furthermore, the bond energy of the formed O-H center dot center dot center dot O hydrogen bond between two *OH radicals is higher than that between *OH and *O-2H group, owing to electronegativity difference of corresponding O atoms.

The Initial Oxidation of the 4H-Sic (0001) Surface with C-related Point Defects: Insight by First-Principles Calculations

Insight into the Initial Oxidation of 4H-Sic from First-Principles Thermodynamics

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

First-principles Investigation on Initial Stage of 2H-Sic(001) Surface Oxidation

The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

Ab Initio Theoretical and Photoemission Studies on Formation of 4H-Sic(0001) SiO2 Interface

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Initial Oxidation of 3C-Sic (111) in Oxidizing Atmosphere Containing Water Vapor: H2O Adsorption from First-Principles Calculations

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

Structure and energetics of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems revealed by first-principles calculations: Defects in SiC, SiO$_{\rm 2}$, and just at their interface

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Effects of point defects on oxidation of 3C-SiC

The Defects Regulating for the Electronic Structure and Optical Properties of 4H-Sic with (0001) Surface

Effects of irradiation defects on the adsorption of oxygen on 3C-SiC low index surfaces

Oxidation of Step Edges on Vicinal 4H-Sic(0001) Surfaces

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Identifying atomic geometry and electronic structure of (2×3)-Sr/Si(100) surface and its initial oxidation

Adsorption and surface diffusion of oxygen on 3C and 2H-SiC polytypes: Numerical studies

Passivation of carbon dimer defects in amorphous SiO2/4H–SiC (0001) interface: A first-principles study