Abstract:Silicon carbide (SiC) is a promising structural and cladding material for accident tolerant fuel cladding of nuclear reactor due to its excellent properties. However, when exposed to severe environments (e.g., during neutron irradiation), lattice defects are created in amounts significantly greater than normal concentrations. Then, a series of radiation damage behaviors (e.g., radiation swelling) appear. Accurate understanding of radiation damage of nuclear materials is the key to the design of new fuel cladding materials. Multi-scale computational simulations are often required to understand the physical mechanism of radiation damage. In this work, the effect of neutron irradiation on the volume swelling of cubic-SiC film with 0.3 mm was studied by using the combination of molecular dynamics (MD) and rate theory (RT). It was found that for C-vacancy (CV), C-interstitial (CI), Si-vacancy (SiV), Si-interstitial (SiI), and Si-antisite (SiC), the volume of supercell increases linearly with the increase of concentration of these defects, while the volume of supercell decreases linearly with the increase of defect concentration for C-antisite (CSi). Furthermore, according to the neutron spectrum of a certain reactor, one RT model was constructed to simulate the evolution of point defect under neutron irradiation. Then, the relationship between the volume swelling and the dose of neutrons can be obtained through the results of MD and RT. It was found that swelling typically increases logarithmically with radiation dose and saturates at relatively low doses, and that the critical dose for abrupt transition of volume is consistent with the available experimental data, which indicates that the rate theory model can effectively describe the radiation damage evolution process of SiC. This work not only presents a systematic study on the relationship between various point defect and excess volume, but also gives a good example of multi-scale modelling through coupling the results of binary collision, MD and RT methods, etc., regardless of the multi-scale modelling only focus on the evolution of primary point defects.

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Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Effects of point defects on oxidation of 3C-SiC

Effects of ion irradiation on microstructures and mechanical properties of SiOC nanocomposites

Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Interaction of irradiation-induced point defects with transmutants (H, He, Li, Be, B, Mg, Al and P) in 3C-SiC ceramics

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

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Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide

Atomic and Electron Analyzing of Irradiation Damage in Si/SiO2 Interfaces Caused by Irradiation: First-principle Calculation

Molecular dynamics study on interfacial thermal conductance of unirradiated and irradiated SiC/C

Preparation and the Effects of Ion Irradiation on Bulk SiOC Ceramics

Effects of Silicon Ion Irradiation on the Interface Properties of SiCf/SiC Composites

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature

A Comparative Study of Low Energy Radiation Responses of SiC, TiC and ZrC

Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy