Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects*

Molecular Dynamics Simulation of High-Temperature Oxidation of 3 CSiC ( 100 ) : Differences Between Si-face and C-face

ReaxFF Molecular Dynamics Simulation on Oxidation Behaviors of 3C‐SiC: Uniaxial Strain Effect

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Initial stage oxidation on nano-trenched Si(1 0 0) surface

Effects of point defects on oxidation of 3C-SiC

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Photoemission Study of the Initial Oxidation Of

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Effect of oxidation on internal friction behavior of C/SiC composites

The interfacial characterization of oxidized SiC(p)/2014 Al composites

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Static and dynamic oxidation behaviour of silicon carbide at high temperature

Oxidation Behavior of SiC Nanowires: A Nanowire Radius‐dependent Growth of Oxide Scale Thickness