Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

ReaxFF Molecular Dynamics Simulation on Oxidation Behaviors of 3C‐SiC: Uniaxial Strain Effect

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Primary Radiation Damage in 3C-Sic under Strain Field Studied with Molecular Dynamics Simulation

ReaxFF Reactive Force Field Development for Cu/Si Systems and application to Copper Cluster Formation During Cu Diffusion Inside Silicon

Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Strain effect on thermal conductivity of 3C-SiC nanowire

Retarded Thermal Oxidation of Strained Si Substrate

Molecular Dynamics Study of Interfacial Micromechanical Behaviors of 6H-SiC/Al Composites under Uniaxial Tensile Deformation

Effect of Uniaxial Stress on the Threshold Displacement Energy of Silicon Carbide

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Effect of oxidation on internal friction behavior of C/SiC composites

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

A Progressive Oxidative Damage Model of C/SiC Composites under Stressed Oxidation Environments

Tensile mechanical behaviors of cubic silicon carbide thin films

Revisiting the Rate-Dependent Mechanical Response of Typical Silicon Structures via Molecular Dynamics

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer

Effects of point defects on oxidation of 3C-SiC